发明申请
- 专利标题: Charge Trap Device and Method for Fabricating the Same
- 专利标题(中): 充电陷阱装置及其制造方法
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申请号: US12164720申请日: 2008-06-30
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公开(公告)号: US20090108334A1公开(公告)日: 2009-04-30
- 发明人: Moon Sig Joo , Seung Ho Pyi , Ki Seon Park , Yong Top Kim , Jae Young Park , Ki Hong Lee
- 申请人: Moon Sig Joo , Seung Ho Pyi , Ki Seon Park , Yong Top Kim , Jae Young Park , Ki Hong Lee
- 申请人地址: KR Icheon-si
- 专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人: HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址: KR Icheon-si
- 优先权: KR10-2007-0110490 20071031
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L29/792
摘要:
A charge trapping device includes a plurality of isolation layers, a plurality of charge trapping layers, a blocking layer, and a control gate electrode. The isolation layers define active regions, and the isolation layers and active regions extend as respective stripes along a first direction on a semiconductor substrate. The charge trapping layers are disposed on the active regions in island forms where the charge trapping layers are separated from each other in the first direction and disposed on the respective active regions between the isolation layers in a second direction perpendicular to the first direction. The blocking layer is disposed on the isolation layers and the charge trapping layers. The control gate electrode is disposed on the charge trapping layer.