发明申请
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11901172申请日： 2007-09-13
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公开(公告)号： US20090114982A1公开(公告)日： 2009-05-07
- 发明人: Kikuo Saka , Kimihiko Yamashita , Toshiyuki Takemori , Yuji Watanabe
- 申请人： Kikuo Saka , Kimihiko Yamashita , Toshiyuki Takemori , Yuji Watanabe
- 优先权： JP2006-251621 20060915; JP2006-318931 20061127
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A disclosed semiconductor device provided with a power MOSFET includes: a semiconductor substrate constituting a drain; a trench formed on a surface of the semiconductor substrate; a gate electrode in the trench; a body diffusion layer on a surface side of the semiconductor substrate, the body diffusion layer being positioned adjacently to the trench and formed shallower than the trench; a source diffusion layer on the surface of the semiconductor substrate; a first interlayer insulating film formed on the gate electrode; and a source electrode film made of a metallic material and formed on the semiconductor substrate. A top surface of the gate electrode and a top surface of the first interlayer insulating film are formed in a recessed manner in the trench relative to the surface of the semiconductor substrate, and a surface portion of the semiconductor substrate for the trench is formed into a tapered shape.
公开/授权文献
- US07745877B2 Semiconductor device and manufacturing method thereof 公开/授权日：2010-06-29
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