发明申请
US20090117491A1 RESOLUTION ENHANCEMENT TECHNIQUES COMBINING INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES
审中-公开
与其他光刻技术相结合的干扰辅助光刻技术的分辨率增强技术
- 专利标题: RESOLUTION ENHANCEMENT TECHNIQUES COMBINING INTERFERENCE-ASSISTED LITHOGRAPHY WITH OTHER PHOTOLITHOGRAPHY TECHNIQUES
- 专利标题(中): 与其他光刻技术相结合的干扰辅助光刻技术的分辨率增强技术
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申请号: US12199273申请日: 2008-08-27
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公开(公告)号: US20090117491A1公开(公告)日: 2009-05-07
- 发明人: Rudolf Hendel , Zhilong Rao , Kuo-Shih Liu , Chris A. Mack , John S. Petersen , Shane Palmer
- 申请人: Rudolf Hendel , Zhilong Rao , Kuo-Shih Liu , Chris A. Mack , John S. Petersen , Shane Palmer
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G03B27/52
- IPC分类号: G03B27/52 ; G03B27/32 ; G03F7/20 ; G03B27/42
摘要:
Methods and systems are disclosed that provide multiple lithography exposures on a wafer, for example, using interference lithography and optical photolithography. Various embodiments may balance the dosage and exposure rates between the multiple lithography exposures to provide the needed exposure on the wafer. Other embodiments provide for assist features and/or may apply resolution enhancement to various exposures. In a specific embodiment, a wafer is first exposed using optical photolithography and then exposed using interference lithography.
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