发明申请
US20090120354A1 CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE
有权
晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
- 专利标题： CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE CRYSTAL AND GROUP-III NITRIDE SEMICONDUCTOR DEVICE
- 专利标题（中）： 晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
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申请号： US12353608申请日： 2009-01-14
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公开(公告)号： US20090120354A1公开(公告)日： 2009-05-14
- 发明人: Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
- 申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
- 优先权： JP2001-134171 20010501; JP2001-147703 20010517; JP2001-152977 20010522; JP2001-195954 20010628; JP2001-355720 20011121; JP2001-358808 20011126
- 主分类号： C30B19/06
- IPC分类号： C30B19/06
摘要：
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
公开/授权文献
- US08623138B2 Crystal growth apparatus 公开/授权日：2014-01-07