发明申请
- 专利标题： THIN-FILMED FIELD EFFECT TRANSISTOR AND MAKING METHOD
- 专利标题（中）： 薄膜场效应晶体管和制作方法
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申请号： US12350715申请日： 2009-01-08
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公开(公告)号： US20090124051A1公开(公告)日： 2009-05-14
- 发明人: Ikuo FUKUI
- 申请人： Ikuo FUKUI
- 优先权： JP2003-304019 20030828
- 主分类号： H01L21/288
- IPC分类号： H01L21/288
摘要：
In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.
公开/授权文献
- US08088642B2 Thin-filmed field effect transistor and making method 公开/授权日：2012-01-03