发明申请
US20090127566A1 Method of Selectively Forming Atomically Flat Plane on Diamond Surface, Diamond Substrate Produced by The Method, and Semiconductor Device Using The Same
有权
在金刚石表面上选择性地形成原子平面的方法，由该方法生产的金刚石基板和使用该方法的半导体器件
- 专利标题： Method of Selectively Forming Atomically Flat Plane on Diamond Surface, Diamond Substrate Produced by The Method, and Semiconductor Device Using The Same
- 专利标题（中）： 在金刚石表面上选择性地形成原子平面的方法，由该方法生产的金刚石基板和使用该方法的半导体器件
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申请号： US12227163申请日： 2007-04-23
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公开(公告)号： US20090127566A1公开(公告)日： 2009-05-21
- 发明人: Norio Tokuda , Hitoshi Umezawa , Satoshi Yamasaki
- 申请人： Norio Tokuda , Hitoshi Umezawa , Satoshi Yamasaki
- 专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 当前专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- 优先权： JP2006-132145 20060511
- 国际申请： PCT/JP2007/058754 WO 20070423
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; C30B23/02 ; C01B31/06
摘要：
[Object]The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface.[Means for Solving Problems]A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.