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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110017991A1

    公开(公告)日：2011-01-27

    申请号：US12934199

    申请日：2009-02-27

    申请人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

    发明人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

    IPC分类号： H01L29/12 ,  H01L29/06 ,  H01L29/22 ,  H01L29/16 ,  H01L29/24 ,  H01L29/20

    CPC分类号： H01L29/861 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/47 ,  H01L29/475 ,  H01L29/872

    摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.

    摘要翻译： 在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔 半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响 的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。 本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝 氮化物（AlN）或氮化硼（BN）。 本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料， 只要在如此低的温度下进行操作即可使热激发能足够小。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09136400B2

    公开(公告)日：2015-09-15

    申请号：US12934199

    申请日：2009-02-27

    申请人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

    发明人： Satoshi Tanimoto ,  Norihiko Kiritani ,  Toshiharu Makino ,  Masahiko Ogura ,  Norio Tokuda ,  Hiromitsu Kato ,  Hideyo Okushi ,  Satoshi Yamasaki

    IPC分类号： H01L21/00 ,  H01L29/861 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

    CPC分类号： H01L29/861 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/47 ,  H01L29/475 ,  H01L29/872

    摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.

    摘要翻译： 在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔 半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响 的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。 本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝 氮化物（AlN）或氮化硼（BN）。 本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料， 只要在如此低的温度下进行操作即可使热激发能足够小。

    MOLDED TRANSPARENT RESIN AND PROCESS FOR PRODUCING THE SAME
    8.
    发明申请
    MOLDED TRANSPARENT RESIN AND PROCESS FOR PRODUCING THE SAME 审中-公开
    模塑透明树脂及其生产方法

    公开(公告)号：US20110213089A1

    公开(公告)日：2011-09-01

    申请号：US13126984

    申请日：2010-08-02

    申请人： Satoshi Yamasaki ,  Hiroshi Hayami ,  Makoto Nakabayashi

    发明人： Satoshi Yamasaki ,  Hiroshi Hayami ,  Makoto Nakabayashi

    IPC分类号： C08F214/28 ,  B29C35/10 ,  C08F8/00

    CPC分类号： G02B1/04 ,  C08K5/103 ,  C08L27/18 ,  C08L27/20 ,  C08L27/12 ,  C08F210/02 ,  C08F214/26 ,  C08F214/28

    摘要： The present invention provides a clear resin molded body which has high heat resistance that can be used in the reflow soldering process using Pb-free solder, which has high transparency that can be used for an optical member, and which can be easily produced, and also provides a method of producing the same.A clear resin molded body includes a molded body of a resin composition composed of a carbon-hydrogen-bond-containing fluororesin, in which the resin composition is crosslinked by irradiating the molded body with ionizing radiation at least once in an atmosphere at a temperature lower than the melting point of the fluororesin and at least once in an atmosphere at a temperature equal to or higher than the melting point of the fluororesin. A method produces the clear resin molded body.

    摘要翻译： 本发明提供一种透明的树脂成型体，该树脂成型体具有高的耐热性，可用于使用可用于光学部件的高透明度并且易于生产的无铅焊料的回流焊接工艺，以及 也提供了制造该方法。 透明树脂成型体包括由含碳氢键的氟树脂构成的树脂组合物的成型体，其中树脂组合物通过在较低温度的气氛中用电离辐射照射成型体至少一次而交联 比氟树脂的熔点高，并且在等于或高于氟树脂的熔点的温度的气氛中至少一次。 一种方法产生透明树脂成型体。

    Head cap for aerosol type atomizer
    10.
    发明授权
    Head cap for aerosol type atomizer 有权
    喷雾式雾化器头盖

    公开(公告)号：US07775408B2

    公开(公告)日：2010-08-17

    申请号：US11795905

    申请日：2006-01-18

    申请人： Kazunori Yamamoto ,  Shin Kanematsu ,  Satoshi Yamasaki

    发明人： Kazunori Yamamoto ,  Shin Kanematsu ,  Satoshi Yamasaki

    IPC分类号： B65D83/00

    CPC分类号： B65D83/24 ,  B65D83/205 ,  B65D83/303

    摘要： A head cap for an aerosol type atomizer is proposed in which a residual gas that remains in the container after the use of the aerosol type atomizer is ended are discharged easily and safely, and which is so structured that the aerosol type atomizer cannot be falsely operated while it is being used. It comprises a cap body mounted over a top of a container accommodating its contents, and a movable member for spray operation disposed inside of the cap body and having a fluid channel extending from a stem fitting part for fitting with a stem and leading to a spray port, the movable member for spray operation having a push button such that pushing down the push button to take a spray position sprays contents of the container from the spray port via the fluid channel, wherein the cap body has a side face elastically deformable so that when the push button of the movable member for spray operation is pushed down to take the spray position, pressing the side face of the cap body inwards locks the movable member for spray operation with the side face to hold the movable member for spray operation at the spray position.

    摘要翻译： 提出了一种用于气溶胶型雾化器的头盖，其中在使用气溶胶型雾化器之后残留在容器中的残余气体被容易且安全地排出，并且其结构使得气溶胶型雾化器不能被错误地操作 而正在被使用。 它包括安装在容纳其内容物的容器的顶部上的盖体，以及设置在盖体内部的用于喷射操作的可动构件，并且具有从杆配件部分延伸的流体通道，用于与杆配合并导致喷雾 用于喷雾操作的可移动部件具有按钮，使得按下按钮以取得喷射位置，经由流体通道从喷雾口喷射容器的内容物，其中盖体具有可弹性变形的侧面，使得 当用于喷射操作的可移动部件的按钮被按下以进行喷射位置时，将盖体的侧面向内侧按压侧面的可动部件进行喷雾操作，以将可动部件保持在喷雾操作状态 喷雾位置。