发明申请
US20090127595A1 SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE STRUCTURE
审中-公开
具有现场屏蔽的半导体结构和形成结构的方法
- 专利标题: SEMICONDUCTOR STRUCTURE WITH FIELD SHIELD AND METHOD OF FORMING THE STRUCTURE
- 专利标题(中): 具有现场屏蔽的半导体结构和形成结构的方法
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申请号: US12127850申请日: 2008-05-28
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公开(公告)号: US20090127595A1公开(公告)日: 2009-05-21
- 发明人: William F. Clark, JR. , Edward J. Nowak
- 申请人: William F. Clark, JR. , Edward J. Nowak
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/772
- IPC分类号: H01L29/772 ; H01L23/48 ; H01L21/762 ; H01L21/8232
摘要:
Disclosed is semiconductor structure that incorporates a field shield below a semiconductor device (e.g., a field effect transistor (FET) or a diode). The field shield is sandwiched between upper and lower isolation layers on a wafer. A local interconnect extends through the upper isolation layer and connects the field shield to a selected doped semiconductor region of the device (e.g., a source/drain region of a FET or a cathode or anode of a diode). Current that passes into the device, for example, during back-end of the line charging, is shunted by the local interconnect away from the upper isolation layer and down into the field shield. Consequently, an electric charge is not allowed to build up in the upper isolation layer but rather bleeds from the field shield into the lower isolation layer and into the substrate below. This field shield further provides a protective barrier against any electric charge that becomes trapped within the lower isolation layer or substrate