发明申请
US20090130414A1 Preparation of A Metal-containing Film Via ALD or CVD Processes
审中-公开
通过ALD或CVD工艺制备含金属膜
- 专利标题： Preparation of A Metal-containing Film Via ALD or CVD Processes
- 专利标题（中）： 通过ALD或CVD工艺制备含金属膜
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申请号： US12255128申请日： 2008-10-21
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公开(公告)号： US20090130414A1公开(公告)日： 2009-05-21
- 发明人: Min-Kyung Kim , Moo-Sung Kim , Xinjian Lei , Sang-Hyun Yang , Yang-Suk Han
- 申请人： Min-Kyung Kim , Moo-Sung Kim , Xinjian Lei , Sang-Hyun Yang , Yang-Suk Han
- 申请人地址： US PA Allentown
- 专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人： AIR PRODUCTS AND CHEMICALS, INC.
- 当前专利权人地址： US PA Allentown
- 主分类号： B32B5/00
- IPC分类号： B32B5/00 ; C23C16/00 ; B32B9/00
摘要：
Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas.