发明申请
- 专利标题： Method of manufacturing a semiconductor device and processing apparatus
- 专利标题（中）： 制造半导体器件和处理装置的方法
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申请号： US12216596申请日： 2008-07-08
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公开(公告)号： US20090130860A1公开(公告)日： 2009-05-21
- 发明人: Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
- 申请人： Hironobu Miya , Eisuke Nishitani , Yuji Takebayashi , Masanori Sakai , Hirohisa Yamazaki , Toshinori Shibata , Minoru Inoue
- 申请人地址： JP TOKYO JP TOKYO
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.,TAIYO NIPPON SANSO CORPORATION
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.,TAIYO NIPPON SANSO CORPORATION
- 当前专利权人地址： JP TOKYO JP TOKYO
- 优先权： JP2007-298552 20071116
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; C23C16/00
摘要：
To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.
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