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    Liquid ejection head and liquid ejection method
    1.
    发明授权
    Liquid ejection head and liquid ejection method 有权
    液体喷射头和液体喷射方法

    公开(公告)号：US08794745B2

    公开(公告)日：2014-08-05

    申请号：US13357857

    申请日：2012-01-25

    申请人： Toru Yamane ,  Tomoyuki Inoue ,  Eisuke Nishitani ,  Kenji Yabe ,  Atsushi Sakamoto

    发明人： Toru Yamane ,  Tomoyuki Inoue ,  Eisuke Nishitani ,  Kenji Yabe ,  Atsushi Sakamoto

    IPC分类号： B41J2/05

    CPC分类号： B41J2/1404 ,  B41J2002/14169 ,  B41J2002/14185 ,  B41J2002/14387

    摘要： A liquid ejection method is effected in a liquid ejection head that includes an ejection orifice for ejecting a liquid, a flow path for supplying the liquid from a liquid supply port to the ejection orifice, and a heat generating element. The heat generating element is rectangular with a long-side to short-side ratio of 2.5 or more for generating thermal energy used to eject the liquid, and a longitudinal direction of the heat generating element is arranged along an extending direction of the flow path. An end portion of the heat generating element on a downstream side with respect to a liquid flowing direction within the flow path is located between an end portion of the ejection orifice on the downstream side and an end portion of the ejection orifice on an upstream side when viewed from a direction in which the liquid is ejected from the ejection orifice.

    摘要翻译： 在液体喷射头中实现液体喷射方法，液体喷射头包括用于喷射液体的喷射口，用于将液体从液体供给口供给到喷射口的流路和发热元件。 发热元件是长边与短边比为2.5或更大的矩形，用于产生用于喷射液体的热能，并且沿着流动路径的延伸方向布置发热元件的纵向方向。 相对于流路内的液体流动方向的下游侧的发热元件的端部位于下游侧的喷射孔的端部与上游侧的喷射孔的端部之间， 从喷射孔喷射液体的方向观察。

    Liquid ejection head
    2.
    发明授权
    Liquid ejection head 有权
    液体喷头

    公开(公告)号：US08474951B2

    公开(公告)日：2013-07-02

    申请号：US13176650

    申请日：2011-07-05

    申请人： Tomoyuki Inoue ,  Ken Tsuchii ,  Eisuke Nishitani ,  Toru Yamane

    发明人： Tomoyuki Inoue ,  Ken Tsuchii ,  Eisuke Nishitani ,  Toru Yamane

    IPC分类号： B41J2/15 ,  B41J2/145

    CPC分类号： B41J2/1404

    摘要： A liquid ejection head includes: a first and a second common liquid chamber formed in a substrate; a first nozzle array in which short and long nozzles are connected to the first common liquid chamber and alternately arranged on one side of the chamber; a second nozzle array in which short and long nozzles are connected to the first common liquid chamber and alternately arranged on the other side; a third nozzle array in which short and long nozzles are connected to the second common liquid chamber and alternately arranged on one side of the chamber; and a fourth nozzle array in which short and long nozzles are connected to the second common liquid chamber and alternately arranged on the other side; wherein the long and short nozzles formed on the one side and the long and short nozzles formed on the other side are disposed within a pitch P.

    摘要翻译： 液体喷射头包括：形成在基板中的第一和第二公共液体室; 第一喷嘴阵列，其中短喷嘴和长喷嘴连接到第一公共液体室并交替地布置在腔室的一侧; 第二喷嘴阵列，其中短喷嘴和长喷嘴连接到第一公共液体室并且交替地布置在另一侧上; 第三喷嘴阵列，其中短喷嘴和长喷嘴连接到第二公共液体室并且交替地布置在腔室的一侧; 以及第四喷嘴阵列，其中短喷嘴和长喷嘴连接到第二公共液体室并且交替地布置在另一侧上; 其中形成在一侧的长和短喷嘴以及形成在另一侧上的长和短喷嘴设置在间距P内。

    Substrate processing apparatus and substrate processing method
    4.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US06875280B2

    公开(公告)日：2005-04-05

    申请号：US09780951

    申请日：2001-02-09

    申请人： Kazuhito Ikeda ,  Eisuke Nishitani ,  Harunobu Sakuma ,  Kazuhiro Nakagomi

    发明人： Kazuhito Ikeda ,  Eisuke Nishitani ,  Harunobu Sakuma ,  Kazuhiro Nakagomi

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54 ,  H01L21/31 ,  H01L21/677 ,  H01L21/687 ,  C23C16/00 ,  H01L21/00

    CPC分类号： H01L21/67748 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/54 ,  H01L21/67751 ,  H01L21/68735

    摘要： A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.

    摘要翻译： 一种基板处理装置，包括：室，气体导入部，气体排出口，基板输送栅极和基板移动部件，其使基板在基板处理位置和基板之间移动; 在基板从衬底传送门转移到室中的衬底的位置以及当衬底通过衬底传送门从腔室传出时位于衬底的位置。 气体导入部，基板处理位置，气体排出口和基板输送口以该顺序设置。 在气体排出口和基板输送口之间设置限制用于处理基板的处理气体朝向基板输送口流动的气体抑制构件。

    Heat treatment method and heat treatment apparatus
    5.
    发明授权
    Heat treatment method and heat treatment apparatus 失效
    热处理方法和热处理装置

    公开(公告)号：US06472639B2

    公开(公告)日：2002-10-29

    申请号：US10108432

    申请日：2002-03-29

    申请人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

    发明人： Eisuke Nishitani ,  Katsuhisa Kasanami ,  Naoko Matsuyama ,  Shinya Sasaki

    IPC分类号： F27B514

    CPC分类号： H01L21/67115 ,  C30B25/105 ,  C30B31/12 ,  H01L21/67109

    摘要： Uniformity of temperature is established within a wafer, and a higher throughput is achieved while the wafer heating time is dramatically reduced by combining lamp heating with hot-wall heating. Lamps 10 are provided outside the furnace body 3 of a hot-wall CVD apparatus. The hot-wall reactor furnace body 3 is preheated to a prescribed temperature. Wafers W are loaded into the furnace body 3, and these wafers W are rapidly heated mediately thereafter to the desired temperature by light emitted by the lamps 10. The lamps 10 are switched off following heating, and the wafer temperature is allowed to reach a uniform state as a result of heat diffusion in the wafers in the hot-wall reactor furnace body 3. It is also possible to adopt an arrangement in which preheating commensurate with the cooling occurring during the transport period is performed before the wafers W are loaded into the furnace body 3. the wafers W are then loaded into the reactor furnace body 3. and the water temperature is allowed to achieve a uniform state.

    摘要翻译： 在晶片内形成均匀的温度，并且通过将灯加热与热壁加热组合来显着降低晶片加热时间，从而实现更高的通量。 灯10设置在热壁CVD装置的炉体3的外部。 将热壁反应炉体3预热至规定温度。 将晶片W装载到炉体3中，并且这些晶片W随后由灯10发出的光中等地迅速地加热到期望的温度。灯10在加热之后被切断，并且允许晶片温度达到均匀 由于在热壁反应炉体3中的晶片中的热扩散的结果，也可以采用这样的配置：在将晶片W装载到 炉体3.然后将晶片W装载到反应器炉体3中，并允许水温达到均匀的状态。

    CVD reactor apparatus
    8.
    发明授权
    CVD reactor apparatus 失效
    CVD反应器装置

    公开(公告)号：US5574247A

    公开(公告)日：1996-11-12

    申请号：US263323

    申请日：1994-06-21

    申请人： Eisuke Nishitani ,  Susmu Tsuzuku ,  Natsuyo Chiba ,  Shigeru Kobayashi ,  Naoyuki Tamura ,  Norihiro Uchida

    发明人： Eisuke Nishitani ,  Susmu Tsuzuku ,  Natsuyo Chiba ,  Shigeru Kobayashi ,  Naoyuki Tamura ,  Norihiro Uchida

    IPC分类号： H01L21/285 ,  C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48 ,  C23C16/54 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/0245 ,  C23C16/4585 ,  C23C16/481 ,  C23C16/54

    摘要： A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.

    摘要翻译： CVD反应器装置包括用于夹持设置在CVD反应器中的衬底的前部的周边边缘并将反应器中的空间分成邻近衬底前部的第一空间的衬底夹具和邻近衬底前侧的第二空间 底物。 该装置还包括用于将反应器的内壁的表面温度冷却到等于或小于沉积下限的温度的单元，以及用于将CVD气体供应到邻近基板前部的第一空间并提供 惰性气体在不同压力下靠近衬底背面的第二空间并且仅在衬底前部产生反应，反应气体监测器和衬底温度监测器。