发明申请
- 专利标题: METHOD FOR FORMING A TRANSPARENT ELECTROCONDUCTIVE FILM
- 专利标题(中): 形成透明电极膜的方法
-
申请号: US12359675申请日: 2009-01-26
-
公开(公告)号: US20090134013A1公开(公告)日: 2009-05-28
- 发明人: Hirohisa Takahashi , Sadayuki Ukishima , Atsushi Ota , Noriaki Tani , Satoru Ishibashi
- 申请人: Hirohisa Takahashi , Sadayuki Ukishima , Atsushi Ota , Noriaki Tani , Satoru Ishibashi
- 申请人地址: JP Chigasaki-shi
- 专利权人: ULVAC, INC.
- 当前专利权人: ULVAC, INC.
- 当前专利权人地址: JP Chigasaki-shi
- 优先权: JP2006-205936 20060728
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and TiO2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
信息查询
IPC分类: