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公开(公告)号：US20120055788A1
公开(公告)日：2012-03-08
申请号：US13297920
申请日：2011-11-16
CPC分类号： C23C14/3414 , C23C14/086 , C23C14/5806
摘要： A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and TiO2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
摘要翻译： 提供具有低电阻率的透明导电膜。 在本发明的成膜方法中，在真空气氛中，通过溅射在基板的表面上形成透明导电膜，其中ZnO作为主要成分，并将Al 2 O 3和TiO 2加入到ZnO中， 然后通过在250℃以上且400℃以下的温度下的加热对透明导电膜进行退火。 所得到的透明导电膜的电阻率降低，因为膜以ZnO为主要成分，并添加了Al和Ti。 由本发明形成的透明导电膜适合作为FDP等的透明电极。
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公开(公告)号：US20090134014A1
公开(公告)日：2009-05-28
申请号：US12359694
申请日：2009-01-26
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C01G9/00 , C01G9/02 , C01P2002/50 , C01P2004/62 , C01P2006/40 , C01P2006/60 , C23C14/3414
摘要： A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and B2O3 are added, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 300° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and B added thereto. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
摘要翻译： 提供具有低电阻率的透明导电膜。 在本发明的成膜方法中，在真空气氛中，通过溅射在基板的表面上形成透明导电膜，其中添加有ZnO作为主要成分并添加Al2O3和B2O3的靶，然后， 透明导电膜通过在300℃以上且400℃以下的温度下的加热进行退火。 所得到的透明导电膜的电阻率降低，因为膜以ZnO为主要成分，并添加了Al和B。 由本发明形成的透明导电膜适合作为FDP等的透明电极。
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公开(公告)号：US20090134013A1
公开(公告)日：2009-05-28
申请号：US12359675
申请日：2009-01-26
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C23C14/086 , C23C14/5806
摘要： A transparent electroconductive film having a low resistivity is provided. In a film-forming method of the present invention, a transparent electroconductive film is formed on a surface of a substrate by sputtering, in a vacuum atmosphere, a target in which ZnO is a main component and Al2O3 and TiO2 are added to ZnO, and then the transparent electroconductive film is annealed by the heating thereof at a temperature of 250° C. or more and 400° C. or less. The resistivity of the obtained transparent electroconductive film is reduced because the film has ZnO as the main component and Al and Ti added therein. The transparent electroconductive film formed by the present invention is suitable as a transparent electrode for the FDP, etc.
摘要翻译： 提供具有低电阻率的透明导电膜。 在本发明的成膜方法中，在真空气氛中，通过溅射在基板的表面上形成透明导电膜，其中ZnO作为主要成分，并将Al 2 O 3和TiO 2加入到ZnO中， 然后通过在250℃以上且400℃以下的温度下的加热对透明导电膜进行退火。 所得到的透明导电膜的电阻率降低，因为膜以ZnO为主要成分，并添加了Al和Ti。 由本发明形成的透明导电膜适合作为FDP等的透明电极。
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公开(公告)号：US08218122B2
公开(公告)日：2012-07-10
申请号：US12475907
申请日：2009-06-01
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： G02F1/13
CPC分类号： H01L23/53238 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.
摘要翻译： 形成具有优异的粘附性和阻隔性和低电阻值的布线膜。 将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。 第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。 此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜 和第二金属膜。
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公开(公告)号：US20110298738A1
公开(公告)日：2011-12-08
申请号：US13137212
申请日：2011-07-28
申请人： Hirohisa Takahashi , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
发明人： Hirohisa Takahashi , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
IPC分类号： G06F3/041
CPC分类号： G06F3/045
摘要： A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.
摘要翻译： 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层（上电极层，下电极层）的表面上的岛状保护体，并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出，当按压柔性面板并使上部电极和下部电极层接触时，通过保护性 使透明导电膜不破裂。
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公开(公告)号：US20100295811A1
公开(公告)日：2010-11-25
申请号：US12814039
申请日：2010-06-11
申请人： Hirohisa TAKAHASHI , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
发明人： Hirohisa TAKAHASHI , Satoru Ishibashi , Noriaki Tani , Sadayuki Ukishima , Satoru Takasawa , Kyuzo Nakamura , Haruhiko Yamamoto
IPC分类号： G06F3/041
CPC分类号： G06F3/045
摘要： A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.
摘要翻译： 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层（上电极层，下电极层）的表面上的岛状保护体，并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出，当按压柔性面板并使上部电极和下部电极层接触时，通过保护性 使透明导电膜不破裂。
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7.发明申请公开(公告)号：US20090236603A1
公开(公告)日：2009-09-24
申请号：US12480150
申请日：2009-06-08
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L27/06 , H01L21/768 , H01L29/786 , H01L29/772 , H01L33/00 , C23C14/00
CPC分类号： H01L23/53238 , H01L21/2855 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and a low resistance is formed. A barrier film having copper as a main component and containing oxygen is formed on an object to form a film thereon by introducing an oxygen gas into a vacuum chamber in which the object to form a film thereon and sputtering a pure copper target. Then, after the introduction of the oxygen gas is stopped, a low-resistance film made of pure copper is formed by sputtering the pure copper target. Since the barrier film and the low-resistance film have copper as the main component, they can be patterned at a time. Since the low-resistance film has a resistance lower than that of the barrier film, the resistance of the entire wiring film is reduced. Since the barrier layer has high adhesion to glass and silicon, the entire wiring film has high adhesion.
摘要翻译： 形成具有优异的粘附性和低电阻的布线膜。 在物体上形成具有铜作为主要成分并含有氧的阻挡膜，以通过将氧气引入到其中形成膜的物体的真空室中并溅射纯铜靶来形成膜。 然后，在停止引入氧气之后，通过溅射纯铜靶而形成由纯铜制成的低电阻膜。 由于阻挡膜和低电阻膜具有铜作为主要成分，因此可以一次形成图案。 由于低电阻膜的阻抗低于阻挡膜的电阻，因此整个布线膜的电阻降低。 由于阻挡层对玻璃和硅具有高粘附性，因此整个布线膜具有高粘附性。
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8.发明申请ELECTROCONDUCTIVE FILM-FORMING METHOD, A THIN FILM TRANSISTOR, A THIN FILM TRANSISTOR-PROVIDED PANEL AND A THIN FILM TRANSISTOR-PRODUCING METHOD 审中-公开电磁膜形成方法，薄膜晶体管，薄膜晶体管提供面板和薄膜晶体管生产方法公开(公告)号：US20090184322A1
公开(公告)日：2009-07-23
申请号：US12391607
申请日：2009-02-24
申请人： Satoru TAKASAWA , Masaki Takei , Hirohisa Takahashi , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
发明人： Satoru TAKASAWA , Masaki Takei , Hirohisa Takahashi , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi
IPC分类号： H01L29/786 , C23C14/34 , H01L29/78
CPC分类号： H01L29/4908 , C23C14/0036 , C23C14/185 , G02F1/1368 , G02F2001/136295 , H01L21/2855 , H01L21/32051 , H01L21/76843 , H01L23/53238 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An electroconductive film having high adhesion and a low resistivity is formed. An electroconductive film composed mainly of copper and containing an addition metal such as Ti is formed by sputtering a target composed mainly of copper in a vacuum atmosphere into which a nitriding gas is introduced. Such an electroconductive film has high adhesion to a silicon layer and a substrate, and is hardly peeled from the substrate. Further, since the electroconductive film has a low resistivity and a low contact resistance to a transparent electroconductive film, the electric characteristics do not degrade even when it is used as an electrode film. The electroconductive film formed by the present invention is suitable particularly as a barrier film for an electrode of a TFT or a semiconductor element.
摘要翻译： 形成具有高粘附性和低电阻率的导电膜。 主要由铜构成并含有添加金属如Ti的导电膜通过溅射在其中引入氮化气体的真空气氛中主要由铜组成的靶而形成。 这样的导电膜对硅层和基板具有高粘合性，并且几乎不从基板上剥离。 此外，由于导电膜对透明导电膜具有低电阻率和低接触电阻，所以即使将其用作电极膜也不会降低电特性。 由本发明形成的导电膜特别适用于TFT或半导体元件的电极的阻挡膜。
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9.发明授权Method for forming conductive film, thin-film transistor, panel with thin-film transistor, and method for manufacturing thin-film transistor 有权用于形成导电膜的方法，薄膜晶体管，具有薄膜晶体管的面板以及制造薄膜晶体管的方法公开(公告)号：US08119462B2
公开(公告)日：2012-02-21
申请号：US12364836
申请日：2009-02-03
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： H01L21/00
CPC分类号： H01L29/41733 , C23C14/185 , C23C14/3407 , C23C14/5806 , H01L21/2855 , H01L21/76843 , H01L21/76877 , H01L23/53238 , H01L27/124 , H01L29/42384 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A conductive film having high adhesion and low specific resistance is formed. A target containing copper as a main component is sputtered in vacuum ambience while an oxygen gas introduced, and then, a conductive film containing copper as a main component and additive metals, such as Ti or Zr, is formed. Such a conductive film has high adhesion to a silicon layer and a glass substrate and is hardly peeled off from the substrate. Furthermore, the specific resistance is low and the contact resistance to a transparent conductive film is also low. Thus, no deterioration in the electric characteristics occurs even when the conductive film is used for an electrode film. Accordingly, the conductive film formed by the present invention suited for TFT, and electrode films and barrier films of semiconductor elements, in particular.
摘要翻译： 形成具有高粘附性和低电阻率的导电膜。 在真空环境中溅射含有铜作为主要成分的靶，同时引入氧气，然后形成以铜为主要成分的导电膜和添加金属如Ti或Zr。 这种导电膜对硅层和玻璃基板具有高粘附性，并且几乎不从基板剥离。 此外，电阻率低，并且对透明导电膜的接触电阻也低。 因此，即使将导电膜用于电极膜也不会发生电特性的劣化。 因此，特别是适用于TFT的本发明形成的导电膜以及半导体元件的电极膜和阻挡膜。
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公开(公告)号：US20090303406A1
公开(公告)日：2009-12-10
申请号：US12475907
申请日：2009-06-01
申请人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
发明人： Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
IPC分类号： G02F1/1343 , C23F1/00 , H01L29/78
CPC分类号： H01L23/53238 , H01L21/2855 , H01L23/53233 , H01L27/124 , H01L2924/0002 , H05K1/0306 , H05K3/16 , H05K3/388 , H01L2924/00
摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.
摘要翻译： 形成具有优异的粘附性和阻隔性和低电阻值的布线膜。 将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。 第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。 此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜 和第二金属膜。
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