发明申请
- 专利标题: PLASMA PROCESSING APPARATUS AND METHOD
- 专利标题(中): 等离子体加工设备和方法
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申请号: US12359691申请日: 2009-01-26
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公开(公告)号: US20090134121A1公开(公告)日: 2009-05-28
- 发明人: Tsuyoshi MORIYA , Hiroyuki Nakayama
- 申请人: Tsuyoshi MORIYA , Hiroyuki Nakayama
- 申请人地址: JP Minato-ku
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2004-096455 20040329
- 主分类号: H05H1/24
- IPC分类号: H05H1/24 ; C23C14/34 ; B44C1/22 ; C23C16/44
摘要:
There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.
公开/授权文献
- US08231800B2 Plasma processing apparatus and method 公开/授权日:2012-07-31
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