发明申请
US20090137131A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
有权
薄膜晶体管，其制造方法，显示装置，氧化膜的修饰方法，形成氧化膜的方法，半导体器件，制造半导体器件的方法以及制造半导体器件的装置
- 专利标题： THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 薄膜晶体管，其制造方法，显示装置，氧化膜的修饰方法，形成氧化膜的方法，半导体器件，制造半导体器件的方法以及制造半导体器件的装置
-
申请号： US12336761申请日： 2008-12-17
-
公开(公告)号： US20090137131A1公开(公告)日： 2009-05-28
- 发明人: Shigeki IMAI , Kazuhiko INOGUCHI , Hikaru KOBAYASHI
- 申请人： Shigeki IMAI , Kazuhiko INOGUCHI , Hikaru KOBAYASHI
- 申请人地址： JP Osaka JP Kyoto
- 专利权人： Sharp Kabushiki Kaisha,Hikaru Kobayashi
- 当前专利权人： Sharp Kabushiki Kaisha,Hikaru Kobayashi
- 当前专利权人地址： JP Osaka JP Kyoto
- 优先权： JP2004-038888 20040216; JP2004-093695 20040326; JP2004-093703 20040326
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.