公开(公告)号：US20070052342A1

公开(公告)日：2007-03-08

申请号：US11515512

申请日：2006-08-31

申请人： Masatsugu Masuda ,  Masaaki Katoh ,  Kazuhiko Inoguchi ,  Hiroshi Umeda ,  Yuhichi Memida ,  Takashi Oouchida ,  Yuhsuke Fujita ,  Masatoshi Omoto

发明人： Masatsugu Masuda ,  Masaaki Katoh ,  Kazuhiko Inoguchi ,  Hiroshi Umeda ,  Yuhichi Memida ,  Takashi Oouchida ,  Yuhsuke Fujita ,  Masatoshi Omoto

IPC分类号： H01J1/62

CPC分类号： C09K11/7774 ,  C09K11/0883 ,  C09K11/7734 ,  H05B33/14 ,  Y02B20/181

摘要： A light-emitting device includes a light-emitting element emitting primary light and a wavelength conversion portion absorbing a part of the primary light and emitting secondary light having a wavelength equal to or longer than the wavelength of the primary light. The wavelength conversion portion includes a plurality of green or yellow light-emitting phosphors and a plurality of red light-emitting phosphors. The green or yellow light-emitting phosphor is implemented by at least one selected from a specific europium (II)-activated silicate phosphor (A-1) and a specific cerium (III)-activated silicate phosphor (A-2). The red light-emitting phosphor is implemented by a specific europium (II)-activated nitride phosphor (B). The light-emitting device emitting white light at efficiency and color rendering property higher than in a conventional example can thus be provided.

摘要翻译： 发光装置包括发射原色光的发光元件和吸收一次光的一部分的波长转换部分，并且发射具有等于或大于初级光的波长的波长的二次光。 波长转换部分包括多个绿色或黄色发光荧光体和多个红色发光荧光体。 绿色或黄色的发光荧光体由选自特定的铕（II）活化的硅酸盐荧光体（A-1）和特定的铈（III）活化的硅酸盐荧光体（A-2）中的至少一种来实现。 红色发光荧光体由特定的铕（II）活化氮化物荧光体（B）实现。 因此，可以提供比现有例更高效率和显色性发光白光的发光装置。

公开(公告)号：US06628348B1

公开(公告)日：2003-09-30

申请号：US09632941

申请日：2000-08-04

申请人： Osamu Sakai ,  Sadahiko Yasukawa ,  Kazuhiko Inoguchi

发明人： Osamu Sakai ,  Sadahiko Yasukawa ,  Kazuhiko Inoguchi

IPC分类号： G02F1133

CPC分类号： G02F1/13334

摘要： A plasma address electrooptical device is provided, wherein the distance between a liquid crystal drive electrode 6a and an adjacent liquid crystal drive electrode 6b is set to be equal to or greater than the distance between the lower surface of said liquid crystal drive electrode 6a and the lower surface of a dielectric layer 3. Moreover, by providing additional electrodes between liquid crystal drive electrodes of the plasma address electrooptical device, the display leakage to adjacent pixels is reduced even further.

摘要翻译： 提供了一种等离子体地址电光装置，其中液晶驱动电极6a和相邻液晶驱动电极6b之间的距离设定为等于或大于液晶驱动电极6a的下表面与 此外，通过在等离子体地址电光装置的液晶驱动电极之间提供附加电极，甚至进一步降低对相邻像素的泄漏。

公开(公告)号：US06254755B1

公开(公告)日：2001-07-03

申请号：US09346267

申请日：1999-07-01

申请人： Shigeki Miura ,  Kimiharu Takeda ,  Nobuo Hagi ,  Kazuhiko Inoguchi

发明人： Shigeki Miura ,  Kimiharu Takeda ,  Nobuo Hagi ,  Kazuhiko Inoguchi

IPC分类号： C25D500

CPC分类号： F01C17/066 ,  C25D7/04

摘要： The object of the present invention is to provide an Oldham ring having uniform electroplating thickness and a scroll member type compressor comprising the same; in order to accomplish the above object, the electroplating process for plating an Oldham ring comprising a ring body and a plurality of key portions extending outwardly from the ring body of the present invention comprises the steps of: soaking the Oldham ring in a plating liquid; arranging at least two cathodes respectively on the inside wall of the ring body at positions corresponding to the areas between each adjacent pair of the key portions; and electroplating the Oldham ring by passing electric current between the cathodes and at least one anode contacting to the plating liquid.

摘要翻译： 本发明的目的是提供一种具有均匀电镀厚度的奥德姆环，以及包括该十字环的涡旋件型压缩机。 为了实现上述目的，用于电镀包括环体的十字环的电镀工艺和从本发明的环体向外延伸的多个键部分包括以下步骤：将十字环浸入电镀液中; 在与相邻的一对键部之间的区域对应的位置处，在环体的内壁上分别设置至少两个阴极; 并且通过在阴极和至少一个与电镀液接触的阳极之间通过电流来电镀奥德姆环。

公开(公告)号：US5995527A

公开(公告)日：1999-11-30

申请号：US803303

申请日：1997-02-20

申请人： Yoshihiro Ueta ,  Kazuhiko Inoguchi ,  Takayuki Yuasa

发明人： Yoshihiro Ueta ,  Kazuhiko Inoguchi ,  Takayuki Yuasa

IPC分类号： H01L21/28 ,  H01L29/43 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： H01S5/0421 ,  H01S5/32341

摘要： A semiconductor laser device including Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1)) layers has an InN contact layer, which has a thickness ranging, preferably, from 0.1 .mu.m to 1.0 .mu.m inclusive. The contact layer is formed by a MOCVD method. When materials for formation of the InN contact layer are fed into a reactor, an organic radical material is also fed and a substrate temperature is controlled to be about 800.degree. C. during the process of growth of the InN layer.

摘要翻译： 包括GaxAlyIn1-x-yN（0≤x≤0,0≤y≤1））的半导体激光器件具有InN接触层，其厚度范围优选为0.1μm m到1.0亩。 接触层由MOCVD法形成。 当将用于形成InN接触层的材料进料到反应器中时，在InN层的生长过程中还加入有机基团材料并将衬底温度控制在约800℃。

公开(公告)号：US5900647A

公开(公告)日：1999-05-04

申请号：US794830

申请日：1997-02-04

申请人： Kazuhiko Inoguchi

发明人： Kazuhiko Inoguchi

IPC分类号： H01L33/00 ,  H01L31/0312

CPC分类号： H01L33/007

摘要： A semiconductor device of the present invention includes: an SiC substrate; an SiC growth layer for absorbing a grating defect of the SiC substrate and/or a damage at and in the vicinity of a surface of the SiC substrate; and Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the SiC growth layer.

摘要翻译： 本发明的半导体器件包括：SiC衬底; 用于吸收SiC衬底的光栅缺陷和/或在SiC衬底的表面附近和其附近的SiC生长层; 和在SiC生长层上形成的GaxAlyIn1-x-yN（0≤x≤1,0

公开(公告)号：US5345460A

公开(公告)日：1994-09-06

申请号：US939901

申请日：1992-09-04

申请人： Haruhisa Takiguchi ,  Seiki Yano ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Toshiyuki Okumura ,  Satoshi Sugahara

发明人： Haruhisa Takiguchi ,  Seiki Yano ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Toshiyuki Okumura ,  Satoshi Sugahara

IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S3/18 ,  H01S3/08

CPC分类号： H01S5/164 ,  H01S5/2004

摘要： A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.

摘要翻译： 提供了根据本发明的具有窗口区域的半导体激光器件，其中在半导体衬底上形成包括包层和被包覆层夹持的有源层的双异质结构，将该双异质结构埋在具有 具有比有源层大的带隙，并且掩埋层形成位于双异质结构的两端面处的窗口区域，其中窗口区域具有包括具有不同带隙的多个半导体层的波导结构。

公开(公告)号：US5292685A

公开(公告)日：1994-03-08

申请号：US919665

申请日：1992-07-24

申请人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

发明人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

IPC分类号： H01S5/12 ,  H01S5/223 ,  H01L21/203

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/2231

摘要： In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.

摘要翻译： 在第一晶体生长步骤中，在半导体衬底上依次生长第一包层，有源层和光波导层。 衍射光栅形成在光波导层的表面。 在第二晶体生长步骤中，在具有衍射光栅的光波导层上生长电流阻挡层。 选择性地蚀刻当前阻挡层以暴露衍射光栅，从而形成条纹槽。 在第三晶体生长步骤中，第二包覆层生长在条形槽内部和当前阻挡层上的衍射光栅上。

公开(公告)号：US5070510A

公开(公告)日：1991-12-03

申请号：US625169

申请日：1990-12-10

申请人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

发明人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/227 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/4031 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2059 ,  H01S5/2201 ,  H01S5/2213 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/4037

摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

公开(公告)号：US06842470B2

公开(公告)日：2005-01-11

申请号：US10302538

申请日：2002-11-22

申请人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

发明人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/2219 ,  H01S5/2231

摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

摘要翻译： 氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。 在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面 与安装表面相对的分层结构。

公开(公告)号：US06549552B1

公开(公告)日：2003-04-15

申请号：US09143608

申请日：1998-08-31

申请人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

发明人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/2219 ,  H01S5/2231

摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

摘要翻译： 氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。 在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面 与安装表面相对的分层结构。