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1.发明申请THIN FILM TRANSISTOR, METHOD OF MANUFACTURING SAME, DISPLAY DEVICE, METHOD OF MODIFYING AN OXIDE FILM, METHOD OF FORMING AN OXIDE FILM, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权薄膜晶体管，其制造方法，显示装置，氧化膜的修饰方法，形成氧化膜的方法，半导体器件，制造半导体器件的方法以及制造半导体器件的装置公开(公告)号：US20090137131A1
公开(公告)日：2009-05-28
申请号：US12336761
申请日：2008-12-17
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , H01L21/0214 , H01L21/02203 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/31654 , H01L21/32105 , H01L29/4908 , H01L29/66757
摘要： In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a gate oxide film (4) is formed through direct oxidation of polycrystalline silicon (51) on the process-target substrate (2). With this step, a silicon dioxide film (42) is formed while growing a silicon dioxide film (41) on the process-target substrate 2. Accordingly, the interface between the polycrystalline silicon (51) and the gate oxide film (4) is kept clean. The gate oxide film (4) is uniformly formed with excellent quality in insulation tolerance and other properties. Therefore, the thin film transistor (1) contains a high quality oxide film with excellent insulation tolerance and other properties which can be formed at low temperature.
摘要翻译： 在薄膜晶体管（1）的制造方法中，进行氧化膜形成工序，由此将具有要形成有栅极氧化膜（4）的表面的工序对象基板（2）浸渍在氧化膜 含有活性氧化物质的溶液; 通过在工艺靶基板（2）上直接氧化多晶硅（51）形成栅极氧化膜（4）。 通过该步骤，在处理对象基板2上生长二氧化硅膜（41）的同时形成二氧化硅膜（42）。因此，多晶硅（51）与栅氧化膜（4）的界面为 保持清洁 栅极氧化膜（4）均匀地形成，具有优良的绝缘耐受性等特性。 因此，薄膜晶体管（1）含有能够在低温下形成的优异的绝缘耐受性等特性的高品质氧化膜。
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