发明申请
- 专利标题: CZOCHRALSKI APPARATUS FOR GROWING CRYSTALS AND PURIFICATION METHOD OF WASTE SALTS USING THE SAME
- 专利标题(中): 用于生长晶体的方法和使用其的废物的纯化方法
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申请号: US12062463申请日: 2008-04-03
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公开(公告)号: US20090139444A1公开(公告)日: 2009-06-04
- 发明人: Jong-Hyeon Lee , Han-Soo Lee , In-Tae Kim , Yoon-Sang Lee , Eung-Ho Kim
- 申请人: Jong-Hyeon Lee , Han-Soo Lee , In-Tae Kim , Yoon-Sang Lee , Eung-Ho Kim
- 优先权: KR10-2007-0122929 20071129
- 主分类号: C30B15/08
- IPC分类号: C30B15/08
摘要:
Disclosed are a czochralski apparatus for growing crystals and a purification method of waste salts using the same. More particularly, the present invention provides a czochralski apparatus for growing crystals comprising screw thread for fixing salt crystals mounted on a pulling bar of the apparatus in order to prevent desorption of crystals caused by load thereof during a crystal growing process without requiring alternative seed crystals and, in addition, a method for purification of waste salts, which can isolate impurities from molten waste salts using a czochralski crystal growing process without alternative adsorption medium, does not generate secondary wastes and may continuously purify the waste salts.
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