发明申请
- 专利标题: NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 氮化物半导体器件及其制造方法
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申请号: US12268509申请日: 2008-11-11
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公开(公告)号: US20090140389A1公开(公告)日: 2009-06-04
- 发明人: Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
- 申请人: Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kenichi Ohtsuka , Yoichiro Tarui , Yasunori Tokuda
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-309756 20071130
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L21/20
摘要:
A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.