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    Film thickness measurement device and film thickness measurement method
    1.
    发明授权
    Film thickness measurement device and film thickness measurement method 有权
    薄膜厚度测量装置和薄膜厚度测量方法

    公开(公告)号：US08885173B2

    公开(公告)日：2014-11-11

    申请号：US13497722

    申请日：2010-07-27

    申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

    发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

    IPC分类号： G01B11/02 ,  G01B11/06

    CPC分类号： G01B11/0625

    摘要： A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.

    摘要翻译： 膜厚测量装置包括测量光源，该测量光源将包含预定波段的测量光提供给半导体膜，分光光学系统和光电检测器，其检测通过叠加来自上表面的反射光分量而形成的输出光的强度，以及 在每个时间点的每个时间点的半导体膜的下表面和获得半导体膜的膜厚的时间变化的膜厚度分析部。 薄膜厚度分析部分获得对应于峰值波长的值，其中由上表面反射的光产生的干涉光的强度和彼此干扰的来自下表面的反射光的强度最大化或最小化，或相邻的 基于在相互不同的时间点检测到的输出光的光谱波形的峰值波长。

    Film thickness measurement device and measurement method
    4.
    发明授权
    Film thickness measurement device and measurement method 有权
    薄膜厚度测量装置及测量方法

    公开(公告)号：US08649023B2

    公开(公告)日：2014-02-11

    申请号：US13201976

    申请日：2010-01-20

    申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

    发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

    IPC分类号： G01B11/02

    CPC分类号： G01B11/0633 ,  G01B11/0683

    摘要： A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.

    摘要翻译： 膜厚测量装置包括测量光源，该测量光源将包含具有第一波长的测量光分量和具有第二波长的测量光分量的测量光提供给测量对象;分光光学系统，其将来自所述第二波长的反射光的干涉光分解 上表面和从测量对象的下表面反射成具有第一波长的干涉光分量和具有第二波长的干涉光分量的反射光，检测在每个时间点的第一和第二干涉光分量的强度的光电检测器，以及 膜厚度分析部，其基于检测强度的时间变化中的第一干涉光分量的检测强度的时间变化的第一相位与第二相位之间的相位差，求出测量对象的膜厚度的时间变化 的第二干扰李 ght组件。

    Method for manufacturing silicon carbide semiconductor device
    6.
    发明授权
    Method for manufacturing silicon carbide semiconductor device 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US08569106B2

    公开(公告)日：2013-10-29

    申请号：US13148537

    申请日：2010-02-15

    申请人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    发明人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7802 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7828 ,  H01L29/872

    摘要： A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.

    摘要翻译： 在偏离角度为5度以下的SiC半导体基板上，形成外延层的薄膜，该外延层能够降低聚束步骤的高度，并且由于活性物质在平台上的迁移失败而导致的晶体缺陷。 第一层外延层的膜形成在具有5度或更小的偏离角的SiC半导体衬底的表面上并与之接触。 随后，反应器中的温度降低。 使第二层外延层在第一层外延层的表面上外延生长并与其接触。 以上述方式，外延层由两层构成，第二外延层的生长温度被设定为低于第一外延层的生长温度。

    REFLECTIVITY MEASURING DEVICE, REFLECTIVITY MEASURING METHOD, MEMBRANE THICKNESS MEASURING DEVICE, AND MEMBRANE THICKNESS MEASURING METHOD
    7.
    发明申请
    REFLECTIVITY MEASURING DEVICE, REFLECTIVITY MEASURING METHOD, MEMBRANE THICKNESS MEASURING DEVICE, AND MEMBRANE THICKNESS MEASURING METHOD 有权
    反射率测量装置，反射率测量方法，膜厚度测量装置和膜厚度测量方法

    公开(公告)号：US20130169968A1

    公开(公告)日：2013-07-04

    申请号：US13822741

    申请日：2011-09-14

    申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

    发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

    IPC分类号： G01N21/55

    CPC分类号： G01N21/55 ,  G01B11/0625 ,  G01B11/0658 ,  G01N21/31

    摘要： A reflectivity measuring device 1 includes a measurement light source 30 that supplies irradiation light L1 to a measurement object, a spectroscopic detection unit 80 that detects, at multi-wavelength, intensity of the irradiation light L1 and intensity of reflected light L2 from the measurement object, a coefficient recording unit 92 that records a conversion coefficient K(λ) for converting a detected value of each wavelength's intensity of the irradiation light L1 into a value corresponding to a detected value of each wavelength's intensity of reflected light L2 from a reference measurement object, and a reflectivity calculation unit 93 that calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light L2 from the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light L1 and the conversion coefficient K(λ).

    摘要翻译： 反射率测量装置1包括：将照射光L1提供给测量对象的测量光源30;分光检测单元80，其从多个波长检测照射光L1的强度和来自测量对象的反射光L2的强度 系数记录单元92，其记录用于将每个波长的照射光L1的强度的检测值转换成与来自参考测量对象的每个波长的反射光强度L2的检测值相对应的值的转换系数K（λ） 以及反射率计算单元93，其根据从每个波长的照射光L1的强度的检测值获得的基准测量对象，基于与每个波长的反射光L2的强度对应的值来计算每个波长的反射率， 系数K（λ）。

    EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE
    8.
    发明申请
    EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE 有权
    外延波形和半导体器件

    公开(公告)号：US20130099253A1

    公开(公告)日：2013-04-25

    申请号：US13808382

    申请日：2011-07-14

    申请人： Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Tomoaki Furusho

    发明人： Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Tomoaki Furusho

    IPC分类号： H01L29/16

    CPC分类号： H01L29/1608 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/6606 ,  H01L29/66068

    摘要： A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.

    摘要翻译： 能够抑制由基板与外延层之间的晶格失配引起的晶体质量下降的半导体器件，并且还可以确保电压维持性能，以及用于形成半导体器件的晶片。 用于制造半导体器件的碳化硅（SiC）的外延晶片包括低电阻基板和设置在其上的外延层。 外延层掺杂有与掺杂到衬底中的掺杂剂相同的掺杂剂，并且具有包括低浓度层和超薄高浓度层的层压结构。 低浓度层中的掺杂浓度低于碳化硅衬底中的掺杂浓度。 超薄高浓度层中的掺杂浓度等于碳化硅衬底中的掺杂浓度。

    Silicon carbide semiconductor device and method for manufacturing the same
    9.
    发明授权
    Silicon carbide semiconductor device and method for manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号：US08350270B2

    公开(公告)日：2013-01-08

    申请号：US12921250

    申请日：2009-03-04

    申请人： Shoyu Watanabe ,  Shuhei Nakata ,  Kenichi Ohtsuka

    发明人： Shoyu Watanabe ,  Shuhei Nakata ,  Kenichi Ohtsuka

    IPC分类号： H01L29/161

    CPC分类号： H01L29/7802 ,  H01L21/047 ,  H01L29/0642 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/66068

    摘要： A silicon carbide MOSFET that exhibits a high source-to-drain withstand voltage and that involves a smaller difference between gate-to-drain capacitance achieved in an activated state and gate-to-drain capacitance achieved in a deactivated state. A silicon carbide drift layer of a first conductivity type is provided on a silicon carbide substrate of a first conductivity type; a pair of base regions are provided in a surface layer portion of the silicon carbide drift layer and exhibit a second conductivity type; a pair of source regions are provided in interiors of surface layer portions of the pair of base regions and exhibit a first conductivity type; and semi-insulating regions are provided between the silicon carbide substrate and the pair of base regions.

    摘要翻译： 表现出高的源极 - 漏极耐受电压并且在激活状态下实现的栅 - 漏电容与在去激活状态下实现的栅 - 漏电容之间的较小差异的碳化硅MOSFET。 在第一导电类型的碳化硅衬底上提供第一导电类型的碳化硅漂移层; 在碳化硅漂移层的表层部分设置一对基区，呈现第二导电型; 一对源极区域设置在一对基极区域的表层部分的内部并呈现出第一导电类型; 并且在碳化硅衬底和一对基极区之间设置半绝缘区域。