发明申请
US20090142930A1 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process
失效
通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
- 专利标题： Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process
- 专利标题（中）： 通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制
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申请号： US11998829申请日： 2007-11-30
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公开(公告)号： US20090142930A1公开(公告)日： 2009-06-04
- 发明人: Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
- 申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
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