发明申请
- 专利标题： Method For The Wet-Chemical Treatment Of A Semiconductor Wafer
- 专利标题（中）： 半导体晶片的湿化学处理方法
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申请号： US12326969申请日： 2008-12-03
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公开(公告)号： US20090145457A1公开(公告)日： 2009-06-11
- 发明人: Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
- 申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
- 申请人地址： DE Munich
- 专利权人： SILTRONIC AG
- 当前专利权人： SILTRONIC AG
- 当前专利权人地址： DE Munich
- 优先权： DE102007058503.0 20071205
- 主分类号： B08B3/04
- IPC分类号： B08B3/04
摘要：
A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
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