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公开(公告)号：US20070267142A1
公开(公告)日：2007-11-22
申请号：US11749938
申请日：2007-05-17
申请人： Brian Murphy , Diego Feijoo , Reinhold Wahlich
发明人： Brian Murphy , Diego Feijoo , Reinhold Wahlich
IPC分类号： G01L21/30 , H01L21/306
CPC分类号： H01L21/30604 , C30B29/06 , C30B33/005 , G01B11/0641 , G01B11/0675 , G01B11/0683 , G01B11/306 , H01L22/12 , H01L22/20
摘要： Treatment of a semiconductor wafer employs: a) position-dependent measuring of a parameter characterizing the semiconductor wafer to determine a position-dependent value of the parameter over an entire surface of the semiconductor wafer, b) oxidizing the entire surface of the semiconductor wafer under the action of an oxidizing agent with simultaneous exposure of the entire surface, the oxidation rate and thus the thickness of the resulting oxide layer dependent on the light intensity at the surface of the semiconductor wafer, and c) removing of the oxide layer, the light intensity in step b) predefined in a position-dependent manner such that differences in the position-dependent values of the parameter measured are reduced by the position-dependent oxidation rate resulting in step b) and subsequent removal of the oxide layer in step c).
摘要翻译： 半导体晶片的处理采用：a）表征半导体晶片的参数的位置相关测量，以确定参数在半导体晶片的整个表面上的位置相关值，b）氧化半导体晶片的整个表面 氧化剂同时暴露整个表面的氧化速率，氧化速率以及所得氧化物层的厚度取决于半导体晶片的表面处的光强度，以及c）去除氧化物层，光 步骤b）中的强度以位置相关方式预定义，使得所测量的参数的位置相关值的差异通过位置依赖氧化速率降低，导致步骤b）并随后在步骤c）中去除氧化物层， 。
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公开(公告)号：US20090007940A1
公开(公告)日：2009-01-08
申请号：US12140306
申请日：2008-06-17
IPC分类号： B08B3/08
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/3209 , H01L21/02052
摘要： Semiconductor wafers are cleaned using a cleaning solution containing an alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.
摘要翻译： 使用初始组成中含有碱性铵成分的清洗液清洗半导体晶片，其中半导体晶片在单晶片处理中与清洗液接触，在清洗过程中加入氟化氢作为其他成分 并且清洁溶液在清洁结束时具有不同于初始组成的组合物。
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3.发明授权公开(公告)号：US09230794B2
公开(公告)日：2016-01-05
申请号：US12134378
申请日：2008-06-06
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
摘要翻译： 半导体晶片按照以下顺序进行以下步骤的清洗，干燥和亲水化：a）用含有氟化氢的液体水溶液处理半导体晶片，半导体晶片至少偶尔围绕其中心轴线旋转，以及b）干燥半导体 在含有臭氧的气氛中以1000-5000转/分钟的转速使半导体晶片围绕其中心轴线旋转，由于由半导体晶片产生的离心力，含有氟化氢的液体水溶液离开半导体晶片 半导体晶片的旋转和表面被臭氧亲水化。
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公开(公告)号：US08070882B2
公开(公告)日：2011-12-06
申请号：US12326969
申请日：2008-12-03
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
摘要翻译： 半导体晶片的湿化学处理方法包括：a）旋转半导体晶片; b）向旋转晶片施加包含直径为100μm或更小直径的气泡的清洗液体，使得在晶片上形成液膜; c）将旋转的半导体晶片暴露于含有反应气体的气氛中; 和d）从晶片上去除液膜。
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5.发明授权公开(公告)号：US07988876B2
公开(公告)日：2011-08-02
申请号：US12023223
申请日：2008-01-31
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L21/30604
摘要： To reduce and homogenize the thickness of a semiconductor layer which lies on the surface of an electrically insulating material, the surface of the semiconductor layer is exposed to the action of an etchant whose redox potential is adjusted as a function of the material and the desired final thickness of the semiconductor layer, so that the material erosion per unit time on the surface of the semiconductor layer due to the etchant becomes less as the thickness of the semiconductor layer decreases, and is only from 0 to 10% of the thickness per second when the desired thickness is reached. The method is carried out without the action of light or the application of an external electrical voltage.
摘要翻译： 为了减少和均匀化位于电绝缘材料表面上的半导体层的厚度，半导体层的表面暴露于蚀刻剂的作用，其氧化还原电位作为材料和期望的最终值的函数被调整 半导体层的厚度，使得由于蚀刻剂在半导体层的表面上的每单位时间的材料侵蚀随着半导体层的厚度减小而变小，并且仅仅是每秒厚度的0至10％ 达到所需的厚度。 该方法在没有光的作用或施加外部电压的情况下进行。
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公开(公告)号：US20070259530A1
公开(公告)日：2007-11-08
申请号：US11743694
申请日：2007-05-03
申请人： Diego Feijoo , Gunter Schwab , Thomas Buschhardt
发明人： Diego Feijoo , Gunter Schwab , Thomas Buschhardt
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02049
摘要： A layer structure comprising a smoothed interlayer and an overlying layer applied on the interlayer, wherein the interlayer is treated with a gaseous etchant containing hydrogen fluoride, a material removal being obtained thereby and the interlayer being smoothed.
摘要翻译： 包括平滑的中间层和施加在中间层上的上层的层结构，其中用含氟化氢的气体蚀刻剂处理中间层，由此获得材料去除并且中间层被平滑化。
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公开(公告)号：US20100139706A1
公开(公告)日：2010-06-10
申请号：US12630005
申请日：2009-12-03
IPC分类号： B08B3/00
CPC分类号： B08B3/08 , H01L21/02052 , H01L21/67028
摘要： Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.
摘要翻译： 半导体晶片在至少部分填充有含氟化氢的溶液的液体容器中处理，使得表面氧化物溶解，沿输送方向输送出溶液并干燥，然后用含臭氧气体处理以氧化 半导体晶片的表面，其中半导体晶片表面的一部分与含臭氧气体接触，而另一部分表面仍然与溶液接触，并且其中溶液和含臭氧气体在空间上分离 使他们不相互接触。
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公开(公告)号：US20090145457A1
公开(公告)日：2009-06-11
申请号：US12326969
申请日：2008-12-03
申请人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
发明人： Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo , Teruo Haibara , Yoshihiro Mori
IPC分类号： B08B3/04
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
摘要翻译： 半导体晶片的湿化学处理方法包括：a）旋转半导体晶片; b）将包含直径为100μm或更小的气泡的清洗液施加到旋转的晶片上，使得在晶片上形成液膜; c）将旋转的半导体晶片暴露于含有反应气体的气氛中; 和d）从晶片上去除液膜。
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9.发明申请公开(公告)号：US20080308122A1
公开(公告)日：2008-12-18
申请号：US12134378
申请日：2008-06-06
IPC分类号： C23G1/02
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
摘要翻译： 半导体晶片按照以下顺序进行以下步骤的清洗，干燥和亲水化：a）用含有氟化氢的液体水溶液处理半导体晶片，半导体晶片至少偶尔围绕其中心轴线旋转，以及b）干燥半导体 在含有臭氧的气氛中以1000-5000转/分钟的转速使半导体晶片围绕其中心轴线旋转，由于由半导体晶片产生的离心力，含有氟化氢的液体水溶液离开半导体晶片 半导体晶片的旋转和表面被臭氧亲水化。
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公开(公告)号：US20070259531A1
公开(公告)日：2007-11-08
申请号：US11744231
申请日：2007-05-04
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/02046 , H01L21/3065
摘要： Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps: a mechanical processing step, an etching step in which the semiconductor wafers are oxidized and material is removed from the front side of the wafers with the aid of a gaseous etchant containing hydrofluoric acid at a temperature of 20 to 70° C., and a polishing step in which the front side of the semiconductor wafer is polished, the processing steps in which the front side of the semiconductor wafer is polished causing material removal which does not amount to more than 5 μm in total.
摘要翻译： 半导体晶片从晶体切割并进行一系列处理步骤，其中从半导体晶片的前侧和后侧去除材料，其包括以下处理步骤：机械加工步骤，蚀刻步骤，其中 半导体晶片被氧化并且借助于含有氢氟酸的气态蚀刻剂在20至70℃的温度下从晶片的前侧去除材料，以及抛光步骤，其中半导体晶片的前侧为 抛光，其中抛光半导体晶片的前侧的处理步骤导致总共不超过5μm的材料去除。
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