发明申请
US20090146181A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS
审中-公开
采用扩散源/漏斗扩展的集成电路系统
- 专利标题: INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS
- 专利标题(中): 采用扩散源/漏斗扩展的集成电路系统
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申请号: US11952939申请日: 2007-12-07
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公开(公告)号: US20090146181A1公开(公告)日: 2009-06-11
- 发明人: Chung Woh Lai , Oleg Gluschenkov , Henry K. Utomo , Lee Wee Teo , Jin Ping Liu , Anita Madan , Rainer Loesing , Jin-Ping Han , Hyung-Yoon Choi
- 申请人: Chung Woh Lai , Oleg Gluschenkov , Henry K. Utomo , Lee Wee Teo , Jin Ping Liu , Anita Madan , Rainer Loesing , Jin-Ping Han , Hyung-Yoon Choi
- 申请人地址: SG Singapore US NY Armonk KR Gyeonggi-do US CA Milpitas
- 专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.,INTERNATIONAL BUSINESS MACHINES CORPORATION,SAMSUNG,INFINEON TECHNOLOGIES NORTH AMERICA CORPORATION
- 当前专利权人: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.,INTERNATIONAL BUSINESS MACHINES CORPORATION,SAMSUNG,INFINEON TECHNOLOGIES NORTH AMERICA CORPORATION
- 当前专利权人地址: SG Singapore US NY Armonk KR Gyeonggi-do US CA Milpitas
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L21/336 ; H01L29/78
摘要:
An integrated circuit system that includes: providing a PFET device including a doped epitaxial layer; and forming a source/drain extension by employing an energy source to diffuse a dopant from the doped epitaxial layer.