发明申请
- 专利标题: METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US12334883申请日: 2008-12-15
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公开(公告)号: US20090155971A1公开(公告)日: 2009-06-18
- 发明人: Yong-Hoon Son , Jong-Wook Lee
- 申请人: Yong-Hoon Son , Jong-Wook Lee
- 优先权: KR2007-0132931 20071218
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
In a semiconductor device and a method of manufacturing the same, a conductive structure is formed on an active region defined by a device isolation layer on a semiconductor substrate. The conductive structure includes a gate pattern and source/drain regions adjacent to the gate pattern. A first semiconductor layer is formed on the active region by a selective epitaxial growth (SEG) process. An amorphous layer is formed on the first semiconductor layer. A second semiconductor layer is formed from a portion of the amorphous layer by a solid-phase epitaxy (SPE) process. Elevated structures are formed on the source/drain regions by removing a remaining portion of the amorphous layer from the substrate so the elevated structure includes the first semiconductor layer and the second semiconductor layer stacked on the first semiconductor layer. The device isolation layer may be prevented from being covered with the elevated structures, to thereby prevent contact failures.
公开/授权文献
- US07704843B2 Method of manufacturing a semiconductor device 公开/授权日:2010-04-27
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