发明申请
- 专利标题： METHOD OF MANUFACTURING A SEMICONDUCOTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11959995申请日： 2007-12-19
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公开(公告)号： US20090160053A1公开(公告)日： 2009-06-25
- 发明人: Thorsten Meyer , Gerald Ofner , Rainer Steiner
- 申请人： Thorsten Meyer , Gerald Ofner , Rainer Steiner
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L23/52
摘要：
A method of manufacturing a semiconductor device is disclosed. One embodiment provides a carrier. Semiconductor chips are placed over the carrier. The semiconductor chips include contact elements. A polymer material is applied over the semiconductor chips and the carrier. The polymer material is removed until the contact elements are exposed. The carrier is removed from the semiconductor chips.
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