Invention Application
US20090163005A1 Schottky barrier source/drain N-MOSFET using ytterbium silicide
审中-公开
肖特基势垒源/漏极使用镱硅化物N-MOSFET
- Patent Title: Schottky barrier source/drain N-MOSFET using ytterbium silicide
- Patent Title (中): 肖特基势垒源/漏极使用镱硅化物N-MOSFET
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Application No.: US12322932Application Date: 2009-02-09
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Publication No.: US20090163005A1Publication Date: 2009-06-25
- Inventor: Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
- Applicant: Shiyang Zhu , Jingde Chen , Sungjoo Lee , Ming Fu Li , Jagar Singh , Chunxiang Zhu , Dim-Lee Kwong
- Assignee: National University of Singapore
- Current Assignee: National University of Singapore
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
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