发明申请
US20090166641A1 Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same
有权
薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置
- 专利标题： Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same
- 专利标题（中）： 薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置
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申请号： US12318244申请日： 2008-12-23
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公开(公告)号： US20090166641A1公开(公告)日： 2009-07-02
- 发明人: Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
- 申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
- 优先权： KR10-2007-0139040 20071227
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/84 ; H01L21/336 ; H01L29/49
摘要：
A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
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