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1.发明申请Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same 有权薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置公开(公告)号：US20090166641A1
公开(公告)日：2009-07-02
申请号：US12318244
申请日：2008-12-23
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
IPC分类号： H01L29/786 , H01L21/84 , H01L21/336 , H01L29/49
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
摘要翻译： 薄膜晶体管（TFT）包括衬底，衬底上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×10 14原子/ cm 3至约1×10 17原子/ cm 3，衬底上的栅电极 栅电极和透明半导体层之间的栅极绝缘层，栅极电极与透明半导体层绝缘的栅极绝缘层以及衬底上的源极和漏极，源极和漏极与透明半导体接触 层。
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2.发明授权Thin film transistor, method of fabricating a thin film transistor and flat panel display device having the same 有权薄膜晶体管，制造薄膜晶体管的方法和具有该薄膜晶体管的平板显示装置公开(公告)号：US08003450B2
公开(公告)日：2011-08-23
申请号：US12318244
申请日：2008-12-23
申请人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
发明人： Jae-Kyeong Jeong , Hyun-Soo Shin , Yeon-Gon Mo , Hyung-Jun Kim , Seong-Joon Lim
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.
摘要翻译： 薄膜晶体管（TFT）包括基板，在基板上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×1014原子/ cm3至约1×1017原子/ cm3，栅极 电极，栅电极和透明半导体层之间的栅极绝缘层，栅极绝缘层与透明半导体层绝缘，源极和漏极在基板上，源电极和漏电极接触 与透明半导体层。
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