发明申请
- 专利标题: ADAPTIVE MEMORY ARRAY VOLTAGE ADJUSTMENT
- 专利标题(中): 自适应存储器阵列电压调整
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申请号: US11967830申请日: 2007-12-31
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公开(公告)号: US20090168573A1公开(公告)日: 2009-07-02
- 发明人: Ming Zhang , Balkaran Gill , Greg Taylor
- 申请人: Ming Zhang , Balkaran Gill , Greg Taylor
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C29/52 ; G11C7/04
摘要:
In some embodiments a sensor is to sense a temperature of a memory occurring in the memory during active use of the memory. A controller is to adjust a voltage supply of the memory during active use of the memory in response to the sensed temperature. In some embodiments a monitor is to monitor errors occurring in a memory during active use of the memory, and a controller is to adjust a voltage supply of the memory during active use of the memory in response to the monitored errors. Other embodiments are described and claimed.
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