发明申请
US20090169732A1 PROTECTING HARD BIAS MAGNETS DURING A CMP PROCESS USING A SACRIFICIAL LAYER
有权
在CMP工艺中使用真空层保护硬偏置磁体
- 专利标题: PROTECTING HARD BIAS MAGNETS DURING A CMP PROCESS USING A SACRIFICIAL LAYER
- 专利标题(中): 在CMP工艺中使用真空层保护硬偏置磁体
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申请号: US11965648申请日: 2007-12-27
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公开(公告)号: US20090169732A1公开(公告)日: 2009-07-02
- 发明人: Ying Hong , Ming Jiang , John Westwood
- 申请人: Ying Hong , Ming Jiang , John Westwood
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; G11B5/39
摘要:
Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.
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