发明申请
- 专利标题: ION GUN SYSTEM, VAPOR DEPOSITION APPARATUS, AND METHOD FOR PRODUCING LENS
- 专利标题(中): 离子枪系统,蒸气沉积装置及其制造方法
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申请号: US12225416申请日: 2007-03-28
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公开(公告)号: US20090169766A1公开(公告)日: 2009-07-02
- 发明人: Yukihiro Takahashi , Terufumi Hamamoto , Kenichi Shinde
- 申请人: Yukihiro Takahashi , Terufumi Hamamoto , Kenichi Shinde
- 申请人地址: JP Tokyo
- 专利权人: HOYA CORPORATION
- 当前专利权人: HOYA CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2006-096767 20060331
- 国际申请: PCT/JP2007/056719 WO 20070328
- 主分类号: C23C14/22
- IPC分类号: C23C14/22 ; G02B1/11
摘要:
An ion gun system includes an ion gun for irradiating an ion beam; an electric power supply unit for supplying electric power to the ion gun; two mass flow regulators for introducing each of two types of gas in the ion gun; a control unit connected to the electric power supply unit for working as ion gun control means for controlling electric power supplied to the ion gun from the electric power supply unit; and a control unit connected to the mass flow regulators for working as mass flow control means for controlling the flow rate of gas introduced from the mass flow regulators in the ion gun. The control unit as mass flow control means is provided with a function of changing the set value for the flow rate of each of the two types of gas to another set value by changing it stepwise within a range where the ion gun is working stably. Accordingly, shortening of film formation time can be attained.