发明申请
- 专利标题： SHALLOW TRENCH ISOLATION ETCH PROCESS
- 专利标题（中）： SHOWOW TRENCH隔离蚀刻工艺
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申请号： US12325220申请日： 2008-11-30
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公开(公告)号： US20090170333A1公开(公告)日： 2009-07-02
- 发明人: Hiroki Sasano , Meihua Shen , Radhika Mani , Sunil Srinivasan , Daehee Weon , Nicolas Gani , Shashank Deshmukh , Anisul Khan
- 申请人： Hiroki Sasano , Meihua Shen , Radhika Mani , Sunil Srinivasan , Daehee Weon , Nicolas Gani , Shashank Deshmukh , Anisul Khan
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas.
公开/授权文献
- US08133817B2 Shallow trench isolation etch process 公开/授权日：2012-03-13
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