发明申请
- 专利标题: PHOTODIODE FOR MULTIPLE WAVELENGTH OPERATION
- 专利标题(中): 多波长光圈操作
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申请号: US12365141申请日: 2009-02-03
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公开(公告)号: US20090174021A1公开(公告)日: 2009-07-09
- 发明人: Dong Zheng , Phillip J. Benzel , Joy Jones , Alexander Kalnitsky , Perumal Ratnam
- 申请人: Dong Zheng , Phillip J. Benzel , Joy Jones , Alexander Kalnitsky , Perumal Ratnam
- 申请人地址: US CA Milpitas
- 专利权人: INTERSIL AMERICAS INC.
- 当前专利权人: INTERSIL AMERICAS INC.
- 当前专利权人地址: US CA Milpitas
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.
公开/授权文献
- US07956432B2 Photodiode for multiple wavelength operation 公开/授权日:2011-06-07