发明申请
- 专利标题: CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY
- 专利标题(中): 结晶装置,用于结晶装置的光学构件,结晶方法,薄膜晶体管的制造方法和显示器的矩阵电路基板的制造方法
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申请号: US12403726申请日: 2009-03-13
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公开(公告)号: US20090180190A1公开(公告)日: 2009-07-16
- 发明人: Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人: Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 优先权: JP2002-188846 20020628
- 主分类号: G02B27/10
- IPC分类号: G02B27/10
摘要:
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.