发明申请
- 专利标题: Oxidation-Free Copper Metallization Process Using In-situ Baking
- 专利标题(中): 使用原位烘烤的无氧铜金属化工艺
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申请号: US11972785申请日: 2008-01-11
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公开(公告)号: US20090181164A1公开(公告)日: 2009-07-16
- 发明人: Yu-Sheng Wang , Shih-Ho Lin , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
- 申请人: Yu-Sheng Wang , Shih-Ho Lin , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
- 主分类号: H05K3/46
- IPC分类号: H05K3/46
摘要:
A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer