发明申请
- 专利标题： PHASE CHANGE MEMORY CELL WITH FINFET AND METHOD THEREFOR
- 专利标题（中）： 相变存储器单元与FINFET及其方法
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申请号： US12016739申请日： 2008-01-18
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公开(公告)号： US20090184306A1公开(公告)日： 2009-07-23
- 发明人: Leo Mathew , Tushar P. Merchant , Ramachandran Muralidhar , Rajesh A. Rao
- 申请人： Leo Mathew , Tushar P. Merchant , Ramachandran Muralidhar , Rajesh A. Rao
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A phase change memory (PCM) cell includes a transistor, a PCM structure, and a heater. The transistor has a first current electrode and a second current electrode in a structure, and a channel region having a first portion along a first sidewall of the structure and having a second portion along a second sidewall of the structure. The second sidewall is opposite the first sidewall. The transistor has a control electrode that has a first portion adjacent to the first sidewall and a second portion adjacent to the second sidewall. The PCM structure exhibits first and second resistive values when in first and second phase states, respectively. The heater is on the structure and produces heat when current flows through the heater for changing the phase state of the phase change structure.