Embodiments of the invention relate generally to an integrated circuit having a memory cell arrangement and a method for reading a memory cell state using a plurality of partial readings. In an embodiment of the invention, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include at least one memory cell, the memory cell being capable of storing a plurality of memory cell states being distinguishable by a predefined number of memory cell threshold values, and a controller configured to read a memory cell state of the at least one memory cell using a number of reference levels that is higher than the predefined number of memory cell threshold values, wherein the reading includes a first partial reading using a first set of a plurality of reference levels and a second partial reading using a second set of a plurality of reference levels, wherein the second set of a plurality of reference levels includes at least one reference level which is different from the reference levels of the first set of a plurality of reference levels.