发明申请
US20090186443A1 METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY
审中-公开
提高复合金属氧化物可编程存储器性能的方法
- 专利标题: METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY
- 专利标题(中): 提高复合金属氧化物可编程存储器性能的方法
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申请号: US12017848申请日: 2008-01-22
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公开(公告)号: US20090186443A1公开(公告)日: 2009-07-23
- 发明人: Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
- 申请人: Eric A. Joseph , Chung Hon Lam , Gerhard I. Meijer , Stephen M. Rossnagel , Alejandro Gabriel Schrott
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号: H01L21/34
- IPC分类号: H01L21/34
摘要:
A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.