利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

146 条记录 (耗时 0.028 秒)

    METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY
    1.
    发明申请
    METHOD TO ENHANCE PERFORMANCE OF COMPLEX METAL OXIDE PROGRAMMABLE MEMORY 审中-公开
    提高复合金属氧化物可编程存储器性能的方法

    公开(公告)号：US20090186443A1

    公开(公告)日：2009-07-23

    申请号：US12017848

    申请日：2008-01-22

    申请人： Eric A. Joseph ,  Chung Hon Lam ,  Gerhard I. Meijer ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    发明人： Eric A. Joseph ,  Chung Hon Lam ,  Gerhard I. Meijer ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    IPC分类号： H01L21/34

    CPC分类号： H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/147 ,  H01L45/16

    摘要： A method of incorporating oxygen vacancies near an electrode/oxide interface region of a complex metal oxide programmable memory cell which includes forming a first electrode of a metallic material which remains metallic upon oxidation, forming a second electrode facing the first electrode, forming an oxide layer in between the first and second electrodes, applying an electrical signal to the first electrode such that oxygen ions from the oxide layer are embedded in and oxidize the first electrode, and forming oxygen vacancies near the electrode/oxide interface region of the complex metal oxide programmable memory cell.

    摘要翻译： 一种在复合金属氧化物可编程存储单元的电极/氧化物界面区域附近引入氧空位的方法，其包括在氧化时形成保持金属的金属材料的第一电极，形成面向第一电极的第二电极，形成氧化物层 在第一和第二电极之间，向第一电极施加电信号，使得来自氧化物层的氧离子嵌入并氧化第一电极，并在复合金属氧化物可编程的电极/氧化物界面区域附近形成氧空位 记忆单元

    Phase change memory cell with limited switchable volume
    2.
    发明授权
    Phase change memory cell with limited switchable volume 失效
    相变容量有限的相变存储单元

    公开(公告)号：US07514705B2

    公开(公告)日：2009-04-07

    申请号：US11410466

    申请日：2006-04-25

    申请人： Matthew J. Breitwisch ,  Chung Hon Lam ,  Jan Boris Philipp ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    发明人： Matthew J. Breitwisch ,  Chung Hon Lam ,  Jan Boris Philipp ,  Stephen M. Rossnagel ,  Alejandro Gabriel Schrott

    IPC分类号： H01L47/00

    CPC分类号： H01L45/144 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1625 ,  H01L45/1666

    摘要： A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.

    摘要翻译： 存储单元包括介电层和相变材料。 电介质层限定了具有宽部分和窄部分的沟槽。 狭窄部分基本上比宽部分窄。 相变材料又至少部分地填充沟槽的宽而窄的部分。 此外，沟槽狭窄部分内的相变材料限定了空隙。 通过向存储单元施加切换电流的脉冲来加热相变材料，可以将数据存储在存储单元中。 有利地，本发明的实施例提供高开关电流密度和加热效率，从而可以减小开关电流脉冲的幅度。

    Scaled-down phase change memory cell in recessed heater
    5.
    发明授权
    Scaled-down phase change memory cell in recessed heater 有权
    嵌入式加热器中的缩小相变存储单元

    公开(公告)号：US08426967B2

    公开(公告)日：2013-04-23

    申请号：US11620138

    申请日：2007-01-05

    申请人： Eric Andrew Joseph ,  Chung Hon Lam ,  Alejandro Gabriel Schrott

    发明人： Eric Andrew Joseph ,  Chung Hon Lam ,  Alejandro Gabriel Schrott

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

    摘要： A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer.

    摘要翻译： 可配置为用作非易失性存储元件的半导体结构包括第一电极，形成在第一电极的上表面的至少一部分上的绝缘层和穿过绝缘层并且相对于第一电极的上表面凹陷的柱 绝缘层。 支柱包括形成在第一电极的上表面的至少一部分上的加热器和形成在靠近加热器的绝缘层的侧壁上和在加热器的上表面的至少一部分上的套环。 该结构还包括形成在绝缘层的上表面的至少一部分上并基本上填充由加热器的上表面限定的体积和套环的上表面的至少一部分的PCM层。 第二电极形成在相变材料层的上表面的至少一部分上。

    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
    7.
    发明授权
    Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement 有权
    具有同心相变材料的非易失性存储单元围绕柱布置形成

    公开(公告)号：US07989796B2

    公开(公告)日：2011-08-02

    申请号：US12051389

    申请日：2008-03-19

    申请人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    发明人： Chung Hon Lam ,  Alejandro Gabriel Schrott

    IPC分类号： H01L47/00

    CPC分类号： H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1691

    摘要： A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and partially fills the opening in the second feature. What is more, a phase change material at least fills a volume between the second feature and the third feature. At least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to the memory cell.

    摘要翻译： 存储单元包括第一特征和第二特征。 第二特征包括介电材料并限定至少部分地覆盖第一特征的开口。 在第一特征上形成第三特征并且部分地填充第二特征中的开口。 此外，相变材料至少填充第二特征和第三特征之间的体积。 响应于将切换信号施加到存储器单元，相变材料的至少一部分可操作以在较低和较高的电阻状态之间切换。