发明申请
- 专利标题: CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
- 专利标题(中): CMOS图像传感器及其制造方法
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申请号: US12020149申请日: 2008-01-25
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公开(公告)号: US20090189233A1公开(公告)日: 2009-07-30
- 发明人: Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu , Chi-Hsin Lo , Feng-Jia Shiu , Chung-Yi Yu
- 申请人: Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu , Chi-Hsin Lo , Feng-Jia Shiu , Chung-Yi Yu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232 ; H01L31/18
摘要:
An optical image sensor is fabricated by forming a pixel array and a peripheral region surrounding the pixel array on a semiconductor substrate, the peripheral region containing peripheral circuitry. An inter-level-dielectric layer is formed over the substrate and a plurality of interconnect wiring layers are formed over the inter-level-dielectric layer. Each interconnect wiring layer includes interconnecting metal features and a layer of inter-level-dielectric material covering the interconnecting metal features. The plurality of interconnect wiring layers are provided in a manner that there are N levels of wiring layers in the peripheral region and 1 to (N−1) levels of wiring layers over the pixel array. An etch-stop layer is formed over the top-most level interconnecting metal features in the peripheral region.
公开/授权文献
- US2672934A Method and apparatus for releasing packers 公开/授权日:1954-03-23
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