发明申请
- 专利标题： Substrate Heating Apparatus, Heating Method, and Semiconductor Device Manufacturing Method
- 专利标题（中）： 基板加热装置，加热方法和半导体装置制造方法
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申请号： US12360378申请日： 2009-01-27
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公开(公告)号： US20090191724A1公开(公告)日： 2009-07-30
- 发明人: Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
- 申请人： Masami Shibagaki , Hiroshi Doi , Akihiro Egami , Toshiaki Sasaki , Shinya Hasegawa
- 申请人地址： JP Kawasaki-shi JP Kawasaki-shi
- 专利权人： CANON ANELVA ENGINEERING CORPORATION,CANON ANELVA CORPORATION
- 当前专利权人： CANON ANELVA ENGINEERING CORPORATION,CANON ANELVA CORPORATION
- 当前专利权人地址： JP Kawasaki-shi JP Kawasaki-shi
- 优先权： JP2008-019235 20080130; JP2009-009352 20090119
- 主分类号： H01L21/26
- IPC分类号： H01L21/26 ; F27D11/00
摘要：
A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.