发明申请
US20090194865A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE
有权
用于制造半导体器件的方法，用于检测半导体衬底和半导体芯片封装的方法
- 专利标题： METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, METHOD FOR DETECTING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP PACKAGE
- 专利标题（中）： 用于制造半导体器件的方法，用于检测半导体衬底和半导体芯片封装的方法
-
申请号： US12236567申请日： 2008-09-24
-
公开(公告)号： US20090194865A1公开(公告)日： 2009-08-06
- 发明人: Masahiro Sekiguchi , Eiji Takano , Tatsuhiko Shirakawa , Kenichiro Hagiwara , Masayuki Dohi , Susumu Harada
- 申请人： Masahiro Sekiguchi , Eiji Takano , Tatsuhiko Shirakawa , Kenichiro Hagiwara , Masayuki Dohi , Susumu Harada
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-251655 20070927
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/78 ; H01L21/66
摘要：
A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.
公开/授权文献
- US07993974B2 Method for manufacturing a semiconductor device 公开/授权日：2011-08-09