发明申请
- 专利标题： VIA BOTTOM CONTACT AND METHOD OF MANUFACTURING SAME
- 专利标题（中）： 通过底部接触及其制造方法
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申请号： US12431289申请日： 2009-04-28
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公开(公告)号： US20090200673A1公开(公告)日： 2009-08-13
- 发明人: Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- 申请人： Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L23/48
摘要：
A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
公开/授权文献
- US07830019B2 Via bottom contact and method of manufacturing same 公开/授权日：2010-11-09
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