Invention Application
US20090206367A1 Design Structure and Method for a Silicon Controlled Rectifier (SCR) Structure for SOI Technology
有权
用于SOI技术的硅控整流器（SCR）结构的设计结构和方法
- Patent Title: Design Structure and Method for a Silicon Controlled Rectifier (SCR) Structure for SOI Technology
- Patent Title (中): 用于SOI技术的硅控整流器（SCR）结构的设计结构和方法
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Application No.: US12031084Application Date: 2008-02-14
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Publication No.: US20090206367A1Publication Date: 2009-08-20
- Inventor: Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra
- Applicant: Robert J. Gauthier, JR. , Junjun Li , Souvick Mitra
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L21/332
Abstract:
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a P+-N body diode and an N+-P body diode. The P+-N body diode and the N+-P body diode are laterally integrated.
Public/Granted literature
- US07943438B2 Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology Public/Granted day:2011-05-17
Information query
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