发明申请
US20090206393A1 NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
审中-公开
非易失性存储元件及其制造方法
- 专利标题： NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 非易失性存储元件及其制造方法
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申请号： US12388040申请日： 2009-02-18
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公开(公告)号： US20090206393A1公开(公告)日： 2009-08-20
- 发明人: Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
- 申请人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
- 优先权： JP2008-037893 20080219
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/28
摘要：
A nonvolatile memory element includes a semiconductor region, a source region and a drain region provided in the semiconductor region, a tunnel insulating layer provided on the semiconductor region between the source region and the drain region, a charge storage layer provided on the tunnel insulating layer, a block insulating layer provided on the charge storage layer, and a control gate electrode provided on the block insulating layer. The charge storage layer includes one of an oxide, a nitride and an oxynitride, which contains at least one material selected from the group consisting of Hf, Al, Zr, Ti and a rare-earth metal, and is entirely or partially crystallized. The block insulating layer includes one of an oxide, an oxynitride, a silicate and an aluminate, which contains at least one rare-earth metal.
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