发明申请
US20090214758A1 A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER
审中-公开
用于处理位于过程室中的放置阶段的基板的处理方法
- 专利标题: A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER
- 专利标题(中): 用于处理位于过程室中的放置阶段的基板的处理方法
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申请号: US12421271申请日: 2009-04-09
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公开(公告)号: US20090214758A1公开(公告)日: 2009-08-27
- 发明人: Hiroshi KANNAN , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
- 申请人: Hiroshi KANNAN , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
- 申请人地址: JP TOKYO
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP TOKYO
- 优先权: JP2002-253674 20020830
- 主分类号: C23C16/52
- IPC分类号: C23C16/52
摘要:
In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.
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