发明申请
US20090218656A1 METHODS OF MAKING SEMICONDUCTOR STRUCTURES INCLUDING VERTICAL DIODE STRUCTURES
有权
制造半导体结构的方法，包括垂直二极管结构
- 专利标题： METHODS OF MAKING SEMICONDUCTOR STRUCTURES INCLUDING VERTICAL DIODE STRUCTURES
- 专利标题（中）： 制造半导体结构的方法，包括垂直二极管结构
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申请号： US12434212申请日： 2009-05-01
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公开(公告)号： US20090218656A1公开(公告)日： 2009-09-03
- 发明人: Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人： Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： H01L29/8605
- IPC分类号： H01L29/8605 ; H01L21/02
摘要：
Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer may be formed over the interior surface of the diode opening and contacting the active region. The diode opening may initially be filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that may be heavily doped with a first type dopant and a bottom portion that may be lightly doped with a second type dopant. The top portion may be bounded by the bottom portion so as not to contact the titanium silicide layer. In one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
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