发明申请
US20090223832A1 Method and Apparatus for Preventing Galvanic Corrosion in Semiconductor Processing
审中-公开
用于防止半导体加工中电镀腐蚀的方法和装置
- 专利标题: Method and Apparatus for Preventing Galvanic Corrosion in Semiconductor Processing
- 专利标题(中): 用于防止半导体加工中电镀腐蚀的方法和装置
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申请号: US12350095申请日: 2009-01-07
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公开(公告)号: US20090223832A1公开(公告)日: 2009-09-10
- 发明人: Sylvain Garaud , Rita Vos , Leonardus Leunissen , Paul Mertens
- 申请人: Sylvain Garaud , Rita Vos , Leonardus Leunissen , Paul Mertens
- 申请人地址: BE Leuven BE Leuven
- 专利权人: Interuniversitair Microelektronica Centrum vzw (IMEC),Katholieke Universiteit Leuven, K.U.LEUVEN R&D
- 当前专利权人: Interuniversitair Microelektronica Centrum vzw (IMEC),Katholieke Universiteit Leuven, K.U.LEUVEN R&D
- 当前专利权人地址: BE Leuven BE Leuven
- 优先权: EP08150201.5 20080111
- 主分类号: C25F1/00
- IPC分类号: C25F1/00 ; C25F7/00
摘要:
The present invention is related to a method and apparatus for cleaning a semiconductor substrate including on a surface of the substrate at least one structure comprising a first conducting or semiconducting material, surrounded by a layer of a second conducting or semiconducting material, said layer essentially extending over the totality of said surface, the first and second material being in physical contact, the method comprising the steps of: providing the substrate, positioning a counter-electrode facing the substrate surface, and supplying an electrolytic fluid to the space between the surface and the electrode, the counter-electrode acting as an anode in the galvanic cell defined by the substrate surface, the cleaning fluid and the counter-electrode.
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