公开(公告)号：US07100304B2

公开(公告)日：2006-09-05

申请号：US10864927

申请日：2004-06-10

申请人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

发明人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

IPC分类号： E21B47/022

CPC分类号： H01L21/67051 ,  G01N33/6893 ,  H01L21/67034

摘要： An apparatus for drying a generally flat substrate that has been cleaned has a rotatable support for supporting the substrate, a substrate drying assembly, and a controller. The substrate drying assembly includes a substrate drying assembly support arm, an outlet for applying liquid to an upper surface of the substrate, and an outlet for applying a drying vapor to the upper surface of the substrate. The substrate drying assembly is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate. The controller causes the substrate drying assembly to be retracted over the upper surface of the substrate at a faster rate near a center of the substrate than near a periphery of the substrate.

公开(公告)号：US20060089280A1

公开(公告)日：2006-04-27

申请号：US11301130

申请日：2005-12-12

申请人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

发明人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

IPC分类号： C11D7/32

CPC分类号： H01L21/02052 ,  C11D3/39 ,  C11D3/3947 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula (1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a′), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

摘要翻译： 本发明描述了包含第一化合物和第二化合物的组合物。 第一种化合物具有化学式（1a），其中m，n和o彼此独立地相当于2或3; 其中p等于1或2; R是具有化学式（1a'）的化学基团，其中q等于1,2或3; 其中R 1，R 2和R 3均独立地选自氢和有机基团。 第二化合物具有化学式（1c）。 金属离子可以存在于溶液中或在与溶液接触的外部介质中。 本发明可用于清洗半导体衬底。

公开(公告)号：US06863795B2

公开(公告)日：2005-03-08

申请号：US10105027

申请日：2002-03-21

申请人： Ivo Teerlinck ,  Paul Mertens

发明人： Ivo Teerlinck ,  Paul Mertens

IPC分类号： C25D5/34 ,  C25D3/02 ,  C25D3/38 ,  C25D3/56 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C23C28/02 ,  C25D5/02 ,  C25D5/10 ,  C25D11/32

CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D3/38 ,  C25D3/56 ,  H01L21/2885 ,  H01L21/76877

摘要： The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

摘要翻译： 本发明涉及一种在基片上镀金属层的方法。 该方法特别优选用于集成电路的金属化结构的形成。

公开(公告)号：US20050009207A1

公开(公告)日：2005-01-13

申请号：US10451230

申请日：2001-12-21

申请人： Rita Vos ,  Paul Mertens ,  Albrecht Fester ,  Oliver Doll ,  Bernd Kolbesen

发明人： Rita Vos ,  Paul Mertens ,  Albrecht Fester ,  Oliver Doll ,  Bernd Kolbesen

IPC分类号： B08B3/08 ,  A61K6/00 ,  C01B15/037 ,  C09K3/00 ,  C09K15/30 ,  C11D3/28 ,  C11D3/39 ,  C11D3/395 ,  C11D11/00 ,  D06L3/02 ,  H01L21/304 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  C07

CPC分类号： C01B15/037 ,  C09K15/30 ,  C11D3/28 ,  C11D3/3902 ,  C11D11/0047 ,  D06L4/12

摘要： The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

摘要翻译： 本发明涉及包含氧化化合物和具有化学式的络合化合物的组合物，其中R 1，R 2，R 3和R 4选自H和任何有机侧链。 氧化性化合物可以是水溶液的形式。 络合化合物用于络合金属离子。 金属离子可以存在于溶液中或在与溶液接触的外部介质中。 本发明可用于清洗半导体衬底。

公开(公告)号：US06261377B1

公开(公告)日：2001-07-17

申请号：US09159679

申请日：1998-09-24

申请人： Paul Mertens ,  Mark Meuris ,  Marc Heyns

发明人： Paul Mertens ,  Mark Meuris ,  Marc Heyns

IPC分类号： B08B700

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： The present invention is related to a method of removing particles and a liquid from a surface of a substrate using at least one rotating cleaning pad. The approach, according to the present invention, is a technique wherein a sharp liquid-vapor boundary is created on the surface of the substrate adjacent to the last wetted rotating cleaning pad of a plurality of rotating cleaning pads and particularly between this last wetted rotating cleaning pad and a first edge of the substrate.

摘要翻译： 本发明涉及使用至少一个旋转清洁垫从基板的表面去除颗粒和液体的方法。 根据本发明的方法是一种技术，其中在与多个旋转清洁垫的最后润湿的旋转清洁垫相邻的衬底的表面上形成尖锐的液 - 气边界，特别是在最后一次润湿的旋转清洁 衬垫和衬底的第一边缘。

公开(公告)号：US08324116B2

公开(公告)日：2012-12-04

申请号：US12813823

申请日：2010-06-11

申请人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

发明人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

IPC分类号： H01L21/28

CPC分类号： H01L21/31111 ,  H01L21/0206 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

摘要翻译： 一种基板处理方法，包括制备具有含有稀土氧化物和碱土金属氧化物中的至少一种的氧化物膜（13,14）的半导体基板（W，11）的工序，所述氧化膜的至少一部分 （13,14）暴露，以及冲洗步骤，用半碱基化学或有机溶剂制成的漂洗液将半导体衬底（W，11）上的氧化膜（13,14）供应。 优选地，碱性化学品是pH大于7的碱性水溶液。此外，优选有机溶剂是浓度基本上为100％的高浓度有机溶剂。

公开(公告)号：US20120227775A1

公开(公告)日：2012-09-13

申请号：US13480516

申请日：2012-05-25

申请人： Steven Brems ,  Paul Mertens

发明人： Steven Brems ,  Paul Mertens

IPC分类号： B08B3/12 ,  B08B7/02 ,  B08B3/02

CPC分类号： H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Methods and apparatuses for cleaning a surface of a substrate are presented. The method comprises positioning a substrate at a controllable distance from a piezoelectric transducer, supplying a cleaning liquid between the substrate and the transducer, applying an oscillating acoustic force to the cleaning liquid by actuating the transducer, and moving the transducer relative to the substrate. The method further comprises, while moving the transducer relative to the substrate, measuring a value that indicates a distance between a surface of the substrate and the transducer, comparing the measured value to a desired value, and adjusting the distance between the surface and the transducer so that the measured value is maintained substantially equal to the desired value. The measured value may be the distance between the surface of the substrate and the transducer or a phase shift between an alternating current and voltage applied to the transducer.

摘要翻译： 介绍了清洗基板表面的方法和装置。 该方法包括将基板定位在离压电换能器可控的距离处，在基板和换能器之间提供清洗液体，通过致动换能器将振荡的声力施加到清洗液体，并相对于基板移动换能器。 该方法还包括：在相对于衬底移动换能器的同时，测量指示衬底的表面与换能器之间的距离的值，将测量值与期望值进行比较，并且调整表面与换能器之间的距离 使得测量值保持基本上等于期望值。 测量值可以是衬底的表面与换能器之间的距离，也可以是施加到换能器的交流电压和电压之间的相移。

公开(公告)号：US20100317185A1

公开(公告)日：2010-12-16

申请号：US12813823

申请日：2010-06-11

申请人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

发明人： Rita Vos ,  Paul Mertens ,  Tom Schram ,  Masayuki Wada

IPC分类号： H01L21/28

CPC分类号： H01L21/31111 ,  H01L21/0206 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

摘要翻译： 一种基板处理方法，包括制备具有含有稀土氧化物和碱土金属氧化物中的至少一种的氧化物膜（13,14）的半导体基板（W，11）的工序，所述氧化膜的至少一部分 （13,14）暴露，以及冲洗步骤，用半碱基化学或有机溶剂制成的漂洗液将半导体衬底（W，11）上的氧化膜（13,14）供应。 优选地，碱性化学品是pH大于7的碱性水溶液。此外，优选有机溶剂是浓度基本上为100％的高浓度有机溶剂。

公开(公告)号：US07224433B2

公开(公告)日：2007-05-29

申请号：US11174103

申请日：2005-07-01

申请人： Paul Mertens ,  Wim Fyen

发明人： Paul Mertens ,  Wim Fyen

IPC分类号： G03B27/42 ,  G03B27/52 ,  G03B27/58 ,  G03B27/32

CPC分类号： G03F7/70341 ,  G03F7/2041 ,  G03F7/70808

摘要： A method and apparatus for immersion lithography is described. The method includes positioning a semiconductor substrate under an optical immersion head assembly, providing an immersion liquid between the substrate and the optical immersion head assembly, and supplying a tensio-active gaseous substance along the perimeter of the contact area of the immersion liquid and the substrate. The immersion liquid contacts at least an area of the substrate. The tensio-active gaseous substance is chosen such that, when at least partially mixed with the immersion liquid, the mixture has a lower surface tension than the immersion liquid, thereby creating a surface tension gradient pulling the immersion liquid from the perimeter towards an inside portion of the contact area.

摘要翻译： 描述浸没式光刻的方法和装置。 该方法包括将半导体衬底定位在光浸入头组件下方，在衬底和光浸入头组件之间提供浸没液体，并沿着浸液和衬底的接触区域的周边提供张力活性气态物质 。 浸没液体接触基板的至少一个区域。 选择张力活性气体物质，使得当与浸没液体至少部分混合时，混合物具有比浸没液体更低的表面张力，从而产生将浸渍液体从周边拉向内部的表面张力梯度 的接触面积。

公开(公告)号：US06928751B2

公开(公告)日：2005-08-16

申请号：US10171430

申请日：2002-06-12

申请人： Chad M. Hosack ,  Jeffrey M. Lauerhaas ,  Mario E. Bran ,  Raoul Standt ,  Paul Patel ,  Yi Wu ,  Geert Doumen ,  Paul Mertens

发明人： Chad M. Hosack ,  Jeffrey M. Lauerhaas ,  Mario E. Bran ,  Raoul Standt ,  Paul Patel ,  Yi Wu ,  Geert Doumen ,  Paul Mertens

IPC分类号： B08B3/02 ,  B08B3/12 ,  H01L21/00 ,  H01L21/304 ,  F26B17/00

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  Y10S134/902

摘要： An apparatus includes a rotatable chuck for supporting a substrate and a splash guard. The splash guard surrounds the chuck and surrounds a substrate mounted on the chuck. The splash guard has a portion that deflects fluid being flung off the substrate by centrifugal action in a manner so as to not splash back onto the substrate. The splash guard is moveable between a process position in which the upper annular edge of the splash guard extends above the chuck and a substrate on the chuck, and a load/unload position in which the splash guard is tilted so that one side of the upper annular edge is below an upper edge of the chuck. The movement of the splash guard facilitates loading and unloading of a substrate.

摘要翻译： 一种装置包括用于支撑衬底和防溅罩的可旋转卡盘。 防溅罩围绕卡盘并围绕安装在卡盘上的基板。 防溅罩具有通过离心作用将流体从基板上偏离的部分，以便不会溅回到基板上。 防溅罩可以在其中防溅罩的上部环形边缘在卡盘上方延伸到卡盘上的基板和加载/卸载位置之间移动，在该位置，防溅罩倾斜使得防护罩的上侧 环形边缘在卡盘的上边缘下方。 防溅罩的运动有助于衬底的装载和卸载。